512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | GSI Technology |
Parts packaging code | QFP |
package instruction | LQFP, QFP100,.63X.87 |
Contacts | 100 |
Reach Compliance Code | compliant |
ECCN code | 3A991.B.2.B |
Maximum access time | 11 ns |
Other features | FLOW-THROUGH OR PIPELINED ARCHITECTURE |
I/O type | COMMON |
JESD-30 code | R-PQFP-G100 |
JESD-609 code | e0 |
length | 20 mm |
memory density | 9437184 bit |
Memory IC Type | CACHE SRAM |
memory width | 36 |
Humidity sensitivity level | 3 |
Number of functions | 1 |
Number of terminals | 100 |
word count | 262144 words |
character code | 256000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 256KX36 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | LQFP |
Encapsulate equivalent code | QFP100,.63X.87 |
Package shape | RECTANGULAR |
Package form | FLATPACK, LOW PROFILE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 2.5/3.3,3.3 V |
Certification status | Not Qualified |
Maximum seat height | 1.6 mm |
Maximum standby current | 0.04 A |
Minimum standby current | 3.14 V |
Maximum slew rate | 0.235 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3.135 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING |
Terminal pitch | 0.65 mm |
Terminal location | QUAD |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 14 mm |