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GT230PS

Description
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size439KB,10 Pages
ManufacturerETC
Download Datasheet Parametric View All

GT230PS Overview

300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

GT230PS Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage60 V
Processing package descriptionGREEN, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeUniversal small signal
Maximum leakage current0.3000 A
feedback capacitor3 pF
Maximum drain on-resistance3 ohm
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