300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Parameter Name | Attribute value |
Number of terminals | 3 |
Minimum breakdown voltage | 60 V |
Processing package description | GREEN, PLASTIC PACKAGE-3 |
Lead-free | Yes |
EU RoHS regulations | Yes |
China RoHS regulations | Yes |
state | ACTIVE |
packaging shape | Rectangle |
Package Size | SMALL OUTLINE |
surface mount | Yes |
Terminal form | GULL WING |
terminal coating | MATTE Tin |
Terminal location | pair |
Packaging Materials | Plastic/Epoxy |
structure | Single WITH BUILT-IN diode |
Number of components | 1 |
transistor applications | switch |
Transistor component materials | silicon |
Channel type | N channel |
field effect transistor technology | Metal-OXIDE SEMICONDUCTOR |
operating mode | ENHANCEMENT |
Transistor type | Universal small signal |
Maximum leakage current | 0.3000 A |
feedback capacitor | 3 pF |
Maximum drain on-resistance | 3 ohm |