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HY29F040AR-90E

Description
512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
Categorystorage    storage   
File Size196KB,40 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY29F040AR-90E Overview

512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

HY29F040AR-90E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSK Hynix
Parts packaging codeTSOP
package instructionREVERSE, TSOP-32
Contacts32
Reach Compliance Codecompli
ECCN code3A001.A.2.C
Maximum access time90 ns
Other featuresMINIMUM 100000 PROGRAM/ERASE CYCLES
command user interfaceYES
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length18.4 mm
memory density4194304 bi
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size8
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1-R
Encapsulate equivalent codeTSSOP32,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
reverse pinoutYES
Maximum seat height1.2 mm
Department size64K
Maximum standby current0.001 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width8 mm
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