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HYE18M1G161BF-6

Description
1-Gbit x16 DDR Mobile-RAM
Categorystorage    storage   
File Size2MB,65 Pages
ManufacturerQIMONDA
Environmental Compliance
Download Datasheet Parametric Compare View All

HYE18M1G161BF-6 Overview

1-Gbit x16 DDR Mobile-RAM

HYE18M1G161BF-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerQIMONDA
Parts packaging codeDSBGA
package instructionTFBGA, BGA60,9X10,32
Contacts60
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)166 MHz
I/O typeCOMMON
interleaved burst length2,4,8,16
JESD-30 codeR-PBGA-B60
length11 mm
memory density1073741824 bi
Memory IC TypeDDR DRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals60
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize64MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X10,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.07 mm
self refreshYES
Continuous burst length2,4,8,16
Maximum standby current0.0012 A
Maximum slew rate0.37 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width10.5 mm
March 2007
HYB18M1G16[0/1]BF–6
HYE18M1G16[0/1]BF–6
HYB18M1G16[0/1]BF–7.5
HYE18M1G16[0/1]BF–7.5
DRAMs for Mobile Applications
1-Gbit x16 DDR Mobile-RAM
RoHS compliant
D ata Sh eet
Rev.1.0

HYE18M1G161BF-6 Related Products

HYE18M1G161BF-6 HYB18M1G16 HYE18M1G16 HYE18M1G161BF-7.5 HYE18M1G160BF-7.5 HYE18M1G160BF-6
Description 1-Gbit x16 DDR Mobile-RAM 1-Gbit x16 DDR Mobile-RAM 1-Gbit x16 DDR Mobile-RAM 1-Gbit x16 DDR Mobile-RAM 1-Gbit x16 DDR Mobile-RAM 1-Gbit x16 DDR Mobile-RAM
Is it Rohs certified? conform to - - conform to conform to conform to
Maker QIMONDA - - QIMONDA QIMONDA QIMONDA
Parts packaging code DSBGA - - DSBGA DSBGA DSBGA
package instruction TFBGA, BGA60,9X10,32 - - TFBGA, BGA60,9X10,32 TFBGA, BGA60,9X10,32 TFBGA, BGA60,9X10,32
Contacts 60 - - 60 60 60
Reach Compliance Code unknow - - unknow unknow unknow
ECCN code EAR99 - - EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST - - FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 5.5 ns - - 6.5 ns 6.5 ns 5.5 ns
Other features AUTO/SELF REFRESH - - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 166 MHz - - 133 MHz 133 MHz 166 MHz
I/O type COMMON - - COMMON COMMON COMMON
interleaved burst length 2,4,8,16 - - 2,4,8,16 2,4,8,16 2,4,8,16
JESD-30 code R-PBGA-B60 - - R-PBGA-B60 R-PBGA-B60 R-PBGA-B60
length 11 mm - - 11 mm 11 mm 11 mm
memory density 1073741824 bi - - 1073741824 bi 1073741824 bi 1073741824 bi
Memory IC Type DDR DRAM - - DDR DRAM DDR DRAM DDR DRAM
memory width 16 - - 16 16 16
Humidity sensitivity level 3 - - 3 3 3
Number of functions 1 - - 1 1 1
Number of ports 1 - - 1 1 1
Number of terminals 60 - - 60 60 60
word count 67108864 words - - 67108864 words 67108864 words 67108864 words
character code 64000000 - - 64000000 64000000 64000000
Operating mode SYNCHRONOUS - - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C - - 85 °C 85 °C 85 °C
Minimum operating temperature -25 °C - - -25 °C -25 °C -25 °C
organize 64MX16 - - 64MX16 64MX16 64MX16
Output characteristics 3-STATE - - 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA - - TFBGA TFBGA TFBGA
Encapsulate equivalent code BGA60,9X10,32 - - BGA60,9X10,32 BGA60,9X10,32 BGA60,9X10,32
Package shape RECTANGULAR - - RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH - - GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 260 - - 260 260 260
power supply 1.8 V - - 1.8 V 1.8 V 1.8 V
Certification status Not Qualified - - Not Qualified Not Qualified Not Qualified
refresh cycle 8192 - - 8192 8192 8192
Maximum seat height 1.07 mm - - 1.07 mm 1.07 mm 1.07 mm
self refresh YES - - YES YES YES
Continuous burst length 2,4,8,16 - - 2,4,8,16 2,4,8,16 2,4,8,16
Maximum standby current 0.0012 A - - 0.0012 A 0.0012 A 0.0012 A
Maximum slew rate 0.37 mA - - 0.27 mA 0.27 mA 0.37 mA
Maximum supply voltage (Vsup) 1.9 V - - 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V - - 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V - - 1.8 V 1.8 V 1.8 V
surface mount YES - - YES YES YES
technology CMOS - - CMOS CMOS CMOS
Temperature level OTHER - - OTHER OTHER OTHER
Terminal form BALL - - BALL BALL BALL
Terminal pitch 0.8 mm - - 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM - - BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 - - 40 40 40
width 10.5 mm - - 10.5 mm 10.5 mm 10.5 mm

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