HYE18M1G160BF-7.5 datasheet, PDF

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HYE18M1G160BF-7.5: Description1-Gbit x16 DDR Mobile-RAM; Categorystorage storage; File Size2MB，65 Pages; ManufacturerQIMONDA; Environmental Compliance

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HYE18M1G160BF-7.5 Overview

1-Gbit x16 DDR Mobile-RAM

HYE18M1G160BF-7.5 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	QIMONDA
Parts packaging code	DSBGA
package instruction	TFBGA, BGA60,9X10,32
Contacts	60
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6.5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	2,4,8,16
JESD-30 code	R-PBGA-B60
length	11 mm
memory density	1073741824 bi
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	60
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	64MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,9X10,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.07 mm
self refresh	YES
Continuous burst length	2,4,8,16
Maximum standby current	0.0012 A
Maximum slew rate	0.27 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	10.5 mm

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March 2007

HYB18M1G16[0/1]BF–6

HYE18M1G16[0/1]BF–6

HYB18M1G16[0/1]BF–7.5

HYE18M1G16[0/1]BF–7.5

DRAMs for Mobile Applications

1-Gbit x16 DDR Mobile-RAM

RoHS compliant

D ata Sh eet

Rev.1.0

HYE18M1G160BF-7.5 Related Products

	HYE18M1G160BF-7.5	HYB18M1G16	HYE18M1G16	HYE18M1G161BF-7.5	HYE18M1G161BF-6	HYE18M1G160BF-6
Description	1-Gbit x16 DDR Mobile-RAM	1-Gbit x16 DDR Mobile-RAM	1-Gbit x16 DDR Mobile-RAM	1-Gbit x16 DDR Mobile-RAM	1-Gbit x16 DDR Mobile-RAM	1-Gbit x16 DDR Mobile-RAM
Is it Rohs certified?	conform to	-	-	conform to	conform to	conform to
Maker	QIMONDA	-	-	QIMONDA	QIMONDA	QIMONDA
Parts packaging code	DSBGA	-	-	DSBGA	DSBGA	DSBGA
package instruction	TFBGA, BGA60,9X10,32	-	-	TFBGA, BGA60,9X10,32	TFBGA, BGA60,9X10,32	TFBGA, BGA60,9X10,32
Contacts	60	-	-	60	60	60
Reach Compliance Code	unknow	-	-	unknow	unknow	unknow
ECCN code	EAR99	-	-	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	-	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6.5 ns	-	-	6.5 ns	5.5 ns	5.5 ns
Other features	AUTO/SELF REFRESH	-	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	-	-	133 MHz	166 MHz	166 MHz
I/O type	COMMON	-	-	COMMON	COMMON	COMMON
interleaved burst length	2,4,8,16	-	-	2,4,8,16	2,4,8,16	2,4,8,16
JESD-30 code	R-PBGA-B60	-	-	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60
length	11 mm	-	-	11 mm	11 mm	11 mm
memory density	1073741824 bi	-	-	1073741824 bi	1073741824 bi	1073741824 bi
Memory IC Type	DDR DRAM	-	-	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	-	-	16	16	16
Humidity sensitivity level	3	-	-	3	3	3
Number of functions	1	-	-	1	1	1
Number of ports	1	-	-	1	1	1
Number of terminals	60	-	-	60	60	60
word count	67108864 words	-	-	67108864 words	67108864 words	67108864 words
character code	64000000	-	-	64000000	64000000	64000000
Operating mode	SYNCHRONOUS	-	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	-	-	85 °C	85 °C	85 °C
Minimum operating temperature	-25 °C	-	-	-25 °C	-25 °C	-25 °C
organize	64MX16	-	-	64MX16	64MX16	64MX16
Output characteristics	3-STATE	-	-	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	-	-	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA60,9X10,32	-	-	BGA60,9X10,32	BGA60,9X10,32	BGA60,9X10,32
Package shape	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	-	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	-	-	260	260	260
power supply	1.8 V	-	-	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	-	-	8192	8192	8192
Maximum seat height	1.07 mm	-	-	1.07 mm	1.07 mm	1.07 mm
self refresh	YES	-	-	YES	YES	YES
Continuous burst length	2,4,8,16	-	-	2,4,8,16	2,4,8,16	2,4,8,16
Maximum standby current	0.0012 A	-	-	0.0012 A	0.0012 A	0.0012 A
Maximum slew rate	0.27 mA	-	-	0.27 mA	0.37 mA	0.37 mA
Maximum supply voltage (Vsup)	1.9 V	-	-	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	-	-	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	-	-	1.8 V	1.8 V	1.8 V
surface mount	YES	-	-	YES	YES	YES
technology	CMOS	-	-	CMOS	CMOS	CMOS
Temperature level	OTHER	-	-	OTHER	OTHER	OTHER
Terminal form	BALL	-	-	BALL	BALL	BALL
Terminal pitch	0.8 mm	-	-	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	-	-	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	-	-	40	40	40
width	10.5 mm	-	-	10.5 mm	10.5 mm	10.5 mm

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