IRFZ34STRR datasheet, PDF - EEWORLD Datasheet

IRFZ34STRR: DescriptionMOSFET N-Chan 60V 30 Amp; CategoryDiscrete semiconductor The transistor; File Size396KB，10 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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MOSFET N-Chan 60V 30 Amp

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Vishay
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	30 A
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	88 W
Maximum pulsed drain current (IDM)	120 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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