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SI7886ADP-T1-E3

Description
MOSFET 30V 25A 5.4W 4.0mohm @ 10V
CategoryDiscrete semiconductor    The transistor   
File Size88KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SI7886ADP-T1-E3 Overview

MOSFET 30V 25A 5.4W 4.0mohm @ 10V

SI7886ADP-T1-E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)15 A
Maximum drain current (ID)15 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)5.4 W
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
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