MCP6231/2/4
20 µA, 300 kHz Rail-to-Rail Op Amp
Features
•
•
•
•
•
•
Gain Bandwidth Product: 300 kHz (typ.)
Supply Current: I
Q
= 20 µA (typ.)
Supply Voltage: 1.8V to 5.5V
Rail-to-Rail Input/Output
Extended Temperature Range: -40°C to +125°C
Available in 5-Pin SC-70 and SOT-23 packages
Description
The Microchip Technology Inc. MCP6231/2/4 opera-
tional amplifiers (op amps) provide wide bandwidth for
the quiescent current. The MCP6231/2/4 family has a
300 kHz Gain Bandwidth Product (GBWP) and 65°
(typ.) phase margin. This family operates from a single
supply voltage as low as 1.8V, while drawing 20 µA
(typ.) quiescent current. In addition, the MCP6231/2/4
family supports rail-to-rail input and output swing, with
a common mode input voltage range of V
DD
+ 300 mV
to V
SS
– 300 mV. These op amps are designed in one
of Microchip’s advanced CMOS processes.
Applications
•
•
•
•
•
•
Automotive
Portable Equipment
Transimpedance amplifiers
Analog Filters
Notebooks and PDAs
Battery-Powered Systems
Package Types
MCP6231
SOT-23-5
V
OUT
1
5 V
DD
–
+
+
MCP6231
PDIP, SOIC, MSOP
NC 1
V
IN
– 2
4 V
IN
–
V
IN
+ 3
V
SS
4
–
+
8 NC
7 V
DD
6 V
OUT
5 NC
Available Tools
• SPICE Macro Models (at www.microchip.com)
• FilterLab
®
Software (at www.microchip.com)
V
SS
2
V
IN
+ 3
MCP6231R
MCP6232
PDIP, SOIC, MSOP
V
OUTA
1
V
INA_
2
- +
+ -
8 V
DD
7 V
OUTB
6 V
INB_
5 V
INB
+
Typical Application
R
G2
V
IN2
R
G1
V
IN1
V
DD
R
X
R
Y
R
Z
–
MCP6231
+
V
OUT
R
F
V
OUT
1
V
DD
2
V
IN
+ 3
SOT-23-5
5 V
SS
–
+
+
–
4 V
IN
–
V
INA
+ 3
V
SS
4
MCP6231U
SC-70-5, SOT-23-5
V
IN
+ 1
V
SS
2
V
IN
– 3
5 V
DD
MCP6234
PDIP, SOIC, TSSOP
V
OUTA
1
V
INA
– 2
14 V
OUTD
- + + - 13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
- + +- 9 V –
INC
8 V
OUTC
4 V
OUT
V
INA
+ 3
V
DD
4
V
INB
+ 5
Summing Amplifier Circuit
V
INB
– 6
V
OUTB
7
©
2005 Microchip Technology Inc.
DS21881C-page 1
MCP6231/2/4
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Absolute Maximum Ratings †
V
DD
- V
SS
.........................................................................7.0V
All Inputs and Outputs ................. V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short Circuit Current ..................................continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
Storage Temperature.................................... –65°C to +150°C
Junction Temperature (T
J
)........................................... +150°C
ESD Protection On All Pins (HBM;MM)
............... ≥
4 kV; 300V
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/2, R
L
= 100 kΩ to V
DD
/2 and V
OUT
≈
V
DD
/2.
Parameters
Input Offset
Input Offset Voltage
Extended Temperature
V
OS
V
OS
-5.0
-7.0
—
—
—
—
—
—
—
—
V
SS
– 0.3
61
—
—
±3.0
83
±1.0
20
1100
±1.0
10 ||6
10
13
||3
—
75
13
Sym
Min
Typ
Max
Units Conditions
+5.0
+7.0
—
—
—
—
—
—
—
—
V
DD
+ 0.3
—
mV
mV
V
CM
= V
SS
T
A
= -40°C to +125°C,
V
CM
= V
SS
(Note)
Input Offset Drift with Temperature
ΔV
OS
/ΔT
A
Power Supply Rejection Ratio
Input Bias Current and Impedance
Input Bias Current:
At Temperature
At Temperature
Input Offset Current
Common Mode Input Impedance
Differential Input Impedance
Common Mode
Common Mode Input Range
Common Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note:
V
DD
I
Q
A
OL
V
CMR
CMRR
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
PSRR
µV/°C T
A
= -40°C to +125°C,
V
CM
= V
SS
dB
pA
pA
pA
pA
Ω||pF
Ω||pF
V
dB
V
CM
= -0.3V to 5.3V,
V
DD
= 5V
V
OUT
= 0.3V to V
DD
– 0.3V,
V
CM
= V
SS
R
L
=10 kΩ, 0.5V Output
Overdrive
V
DD
= 1.8V
V
DD
= 5.5V
T
A
= +85°C
T
A
= +125°C
V
CM
= V
SS
90
110
—
dB
V
OL
, V
OH
V
SS
+ 35
I
SC
I
SC
—
—
1.8
10
—
±6
±23
—
20
V
DD
– 35
—
—
5.5
30
mV
mA
mA
V
µA
I
O
= 0, V
CM
= V
DD
– 0.5V
The SC-70 package is only tested at +25°C.
DS21881C-page 2
©
2005 Microchip Technology Inc.
MCP6231/2/4
AC ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to 5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
6.0
52
0.6
—
—
—
µV
P-P
nV/√Hz
fA/√Hz
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
300
65
0.15
—
—
—
kHz
°
V/µs
G = +1
Sym
Min
Typ
Max
Units
Conditions
TEMPERATURE CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +5.5V and V
SS
= GND.
Parameters
Temperature Ranges
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-MSOP
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 14L-PDIP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
—
—
—
331
256
206
85
163
70
120
100
—
—
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
-40
-40
-65
—
—
—
+125
+125
+150
°C
°C
°C
Note
Sym
Min
Typ
Max
Units
Conditions
The internal Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
©
2005 Microchip Technology Inc.
DS21881C-page 3
MCP6231/2/4
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
90
CMRR, PSRR (dB)
630 Samples
V
CM
= V
SS
Percentage of Occurrences
85
PSRR (V
CM
= V
SS
)
80
75
CMRR (V
CM
= -0.3V to +5.3V,
V
DD
= 5.0V)
-50
-25
0
25
50
75
Ambient Temperature (°C)
100
125
70
-5
-4
-3
-2
-1
0
1
2
3
4
Input Offset Voltage (mV)
5
FIGURE 2-1:
Input Offset Voltage.
FIGURE 2-4:
Temperature.
120
Open-Loop Gain (dB)
CMRR, PSRR vs. Ambient
100
90
PSRR, CMRR (dB)
80
70
60
50
40
30
20
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
Gain
80
60
40
20
0
Phase
-60
-90
-120
-150
-180
CMRR
PSRR+
10
100
1k
Frequency (Hz)
10k
100k
-20
-210
0.1
1
10 100 1k 10k
1.E+
1M 10M
1.E- 1.E+ 1.E+ 1.E+ 1.E+ 1.E+
100k
1.E+ 1.E+
01 00 01
Frequency (Hz)
05 06 07
02 03 04
FIGURE 2-2:
Frequency.
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
PSRR, CMRR vs.
FIGURE 2-5:
Frequency.
30%
25%
20%
15%
10%
5%
0%
0.0
0.2
0.4
Open-Loop Gain, Phase vs.
Percentage of Occurrences
Percentage of Occurrences
630 Samples
V
CM
= V
DD
/2
T
A
= +85°C
632 Samples
V
CM
= V
DD
/2
T
A
= +125°C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Input Bias Current (pA)
Input Bias Current (nA)
FIGURE 2-3:
Input Bias Current at +85°C.
FIGURE 2-6:
Input Bias Current at +125°C.
DS21881C-page 4
©
2005 Microchip Technology Inc.
2.0
0
6
12
18
24
30
36
42
Open-Loop Phase (°)
PSRR-
100
R
L
= 10 kΩ
V
CM
= V
DD
/2
0
-30
MCP6231/2/4
Note:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
1,000
Input Noise Voltage Density
(nV/ Hz)
100
10
0.1
1
10
100
1k
10k 100k
1.E-01 1.E+0 1.E+0 1.E+0 1.E+0 1.E+0 1.E+0
0
1
2
3
4
5
Frequency (Hz)
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
Percentage of Occurrences
628 Samples
V
CM
= V
SS
T
A
= -40°C to +125°C
0
2
4
6
-8
-6
-4
-2
8
10
-12
-10
Input Offset Voltage Drift (µV/°C)
FIGURE 2-7:
vs. Frequency.
550
Input Offset Voltage (µV)
Input Noise Voltage Density
FIGURE 2-10:
Input Offset Voltage Drift.
100
Input Offset Voltage (µV)
V
DD
= 1.8V
450
350
250
150
0.0
0.2
0.4
0.6
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
T
A
= +125°C
50
0
-50
-100
-150
-200
-250
-300
V
DD
= 1.8V
V
CM
= V
SS
V
DD
= 5.5V
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-0.4
-0.2
2.2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
Common Mode Input Voltage (V)
FIGURE 2-8:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 1.8V.
200
Input Offset Voltage (µV)
150
100
50
0
-50
-100
-150
-200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
-0.5
6.0
Common Mode Input Voltage (V)
FIGURE 2-11:
Output Voltage.
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
Input Offset Voltage vs.
Output Short-Circuit Current
(mA)
V
DD
= 5.5 V
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
+I
SC
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
-I
SC
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
FIGURE 2-9:
Input Offset Voltage vs.
Common Mode Input Voltage at V
DD
= 5.5V.
FIGURE 2-12:
Output Short-Circuit Current
vs. Ambient Temperature.
©
2005 Microchip Technology Inc.
DS21881C-page 5
12
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