IS61LV2568L-8TL datasheet, PDF

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IS61LV2568L-8TL: DescriptionSRAM 2Mb (256k x 8) Async SRAM 3.3v; Categorystorage storage; File Size187KB，14 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/; Environmental Compliance

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IS61LV2568L-8TL Overview

SRAM 2Mb (256k x 8) Async SRAM 3.3v

IS61LV2568L-8TL Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP44,.46,32
Contacts	44
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Factory Lead Time	8 weeks
Maximum access time	8 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G44
JESD-609 code	e3
length	18.415 mm
memory density	2097152 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	44
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP44,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.003 A
Minimum standby current	3 V
Maximum slew rate	0.065 mA
Maximum supply voltage (Vsup)	3.63 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	10
width	10.16 mm
Base Number Matches	1

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IS61LV2568L

256K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

•

High-speed access time: 8, 10 ns

Operating Current: 50mA (typ.)

Standby Current: 700µA (typ.)

Multiple center power and ground pins for

greater noise immunity

Easy memory expansion with

and

options

power-down

TTL compatible inputs and outputs

Single 3.3V power supply

Packages available:

– 36-pin 400-mil SOJ

– 44-pin TSOP (Type II)

Lead-free available

APRIL 2008

DESCRIPTION

The

ISSI

IS61LV2568L is a very high-speed, low power,

262,144-word by 8-bit CMOS static RAM. The IS61LV2568L

is fabricated using

ISSI

's high-performance CMOS tech-

nology. This highly reliable process coupled with innova-

tive circuit design techniques, yields higher performance

and low power consumption devices.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down to 36mW (max.) with CMOS input levels.

The IS61LV2568L operates from a single 3.3V power

supply and all inputs are TTL-compatible.

The IS61LV2568L is available in 36-pin 400-mil SOJ and

44-pin TSOP (Type II) packages.

•

FUNCTIONAL BLOCK DIAGRAM

A0-A17

DECODER

256K X 8

MEMORY ARRAY

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. D

04/28/08

IS61LV2568L-8TL Related Products

	IS61LV2568L-8TL	IS61LV2568L-8TL-TR	IS61LV2568L-10TL-TR	IS61LV2568L-10KLI
Description	SRAM 2Mb (256k x 8) Async SRAM 3.3v	SRAM 2Mb (256k x 8) Async SRAM 3.3v	SRAM 2Mb 256Kx8 10ns Async SRAM 3.3v	SRAM 2Mb 256Kx8 10ns Async SRAM 3.3v
Is it lead-free?	Lead free	-	Lead free	Lead free
Is it Rohs certified?	conform to	-	conform to	conform to
Parts packaging code	TSOP2	-	TSOP2	SOJ
package instruction	TSOP2, TSOP44,.46,32	-	TSOP2,	SOJ, SOJ36,.44
Contacts	44	-	44	36
Reach Compliance Code	compliant	-	compliant	compliant
ECCN code	3A991.B.2.A	-	3A991.B.2.A	3A991.B.2.A
Factory Lead Time	8 weeks	-	8 weeks	8 weeks
Maximum access time	8 ns	-	10 ns	10 ns
JESD-30 code	R-PDSO-G44	-	R-PDSO-G44	R-PDSO-J36
JESD-609 code	e3	-	e3	e3
length	18.415 mm	-	18.415 mm	23.5 mm
memory density	2097152 bit	-	2097152 bit	2097152 bit
Memory IC Type	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM
memory width	8	-	8	8
Humidity sensitivity level	3	-	3	3
Number of functions	1	-	1	1
Number of terminals	44	-	44	36
word count	262144 words	-	262144 words	262144 words
character code	256000	-	256000	256000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	-	70 °C	85 °C
organize	256KX8	-	256KX8	256KX8
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	-	TSOP2	SOJ
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	-	260	260
Certification status	Not Qualified	-	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	-	1.2 mm	3.75 mm
Maximum supply voltage (Vsup)	3.63 V	-	3.63 V	3.63 V
Minimum supply voltage (Vsup)	3.135 V	-	2.97 V	2.97 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V	3.3 V
surface mount	YES	-	YES	YES
technology	CMOS	-	CMOS	CMOS
Temperature level	COMMERCIAL	-	COMMERCIAL	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed	-	MATTE TIN	Matte Tin (Sn) - annealed
Terminal form	GULL WING	-	GULL WING	J BEND
Terminal pitch	0.8 mm	-	0.8 mm	1.27 mm
Terminal location	DUAL	-	DUAL	DUAL
Maximum time at peak reflow temperature	10	-	40	40
width	10.16 mm	-	10.16 mm	10.16 mm
Base Number Matches	1	-	1	1

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