HiPerFET
TM
Power MOSFET
Single Die MOSFET
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
V
ISOL
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C
Continuous
Transient
IXFK 55N50
IXFX 55N50
IXFN 55N50
V
DSS
I
D25
R
DS(on)
t
rr
= 500 V
= 55 A
= 90mΩ
Ω
≤
250 ns
Maximum Ratings
500
500
±20
±30
55
220
55
60
10
625
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
PLUS247(IXFX)
G
(TAB)
C
E
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 4
Ω
T
C
= 25°C
TO-264 AA (IXFK)
G
W
°C
°C
°C
°C
D
D (TAB)
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
1.6 mm (0.062 in.) from case for 10 s (IXFK, IXFX)
Mounting torque
Terminal leads
50/60 Hz, RMS
I
ISOL
≤
1 mA
PLUS247
TO-264
SOT-227B
(IXFK, IXFX)
(IXFN)
(IXFN)
t = 1minute
t=1s
300
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
2500
3000
5
10
30
V~
V~
g
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
D
S
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
500
2.5
4.5
±200
25
2
90
V
V
nA
µA
mA
mΩ
Features
•
International standard packages
•
Encapsulating epoxy meets
UL 94 V-0, flammability classification
•
miniBLOC with Aluminium nitride
isolation
•
Low R
DS (on)
HDMOS
TM
process
•
Rugged polysilicon gate cell structure
•
Unclamped Inductive Switching (UIS)
rated
•
Low package inductance
•
Fast intrinsic Rectifier
Advantages
•
PLUS247 package for clip or spring
bar mounting
•
Easy to mount
•
Space savings
•
High power density
DS97502G(11/04)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2004 IXYS All rights reserved
IXFK55N50
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
R
thCK
IXFK, IXFX
0.15
0.05
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1
Ω
(External),
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
DS
= 10 V; I
D
= 0.5 • I
D25
Note 1
Characteristic Values
Min. Typ. Max.
45
9400
1280
460
45
60
120
45
330
55
155
0.20
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
K/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
IXFX55N50
IXFN55N50
TO-264 AA Outline
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
Source-Drain Diode
(T
J
= 25°C, unless otherwise specified)
Symbol
Test Conditions
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Notes: 1.
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
PLUS247 Outline
I
F
= 25 A, -di/dt = 100 A/µs, V
R
= 100 V
V
GS
= 0
Repetitive;
pulse width limited by T
JM
I
F
= 100 A, V
GS
= 0 V
Note 1
Characteristic Values
Min. Typ. Max.
55
220
A
A
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
miniBLOC (SOT-227B) Outline
1.5
250
1.0
10
V
ns
µC
A
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
38.00
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
Inches
Min.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
Max.
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
Terminals:
1 - Gate
2 - Collector
R
S
T
U
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXFK55N50
IXFX55N50
IXFN55N50
140
120
Figure 1. Output Characteristics at 25
O
C
T
J
= 25
O
C
V
GS
= 10V
9V
8V
7V
6V
Figure 2. Output Characteristics at 125
O
C
100
T
J
= 125
O
C
V
GS
= 10V
9V
8V
7V
6V
80
I
D
- Amperes
I
D
- Amperes
100
80
60
40
20
0
60
5V
40
20
0
5V
0
4
8
12
16
20
24
0
4
8
12
16
20
24
V
DS
- Volts
V
DS
- Volts
Figure 3.
2.8
V
GS
= 10V
R
DS(on)
normalized to 0.5
I
D25
value vs. I
D
2.2
2.0
1.8
1.6
1.4
Figure 4. R
DS(on)
normalized to 0.5
I
D25
value vs. T
J
V
GS
= 10V
R
DS(ON)
- Normalized
2.0
1.6
T
J
= 125
O
C
R
DS(ON)
- Normalized
2.4
I
D
= 55A
T
J
= 25
O
C
1.2
0.8
I
D
= 27.5A
1.2
1.0
25
0
20
40
60
80
100
120
50
75
100
125
150
I
D
- Amperes
T
J
- Degrees C
60
50
Figure 5. Drain Current vs. Case Temperature
100
IXF_55N50
Figure 6. Admittance Curves
80
I
D
- Amperes
IXF_50N50
I
D
- Amperes
40
30
20
10
0
T
J
= 125
o
C
60
40
20
0
3.0
T
J
= 25
o
C
-50
-25
0
25
50
75
100 125 150
3.5
4.0
4.5
5.0
5.5
6.0
T
C
- Degrees C
© 2004 IXYS All rights reserved
V
GS
- Volts
IXFK55N50
Figure 7. Gate Charge
12
10
V
DS
= 250V
I
D
= 27.5A
IXFX55N50
IXFN55N50
Figure 8. Capacitance Curves
10000
Ciss
f = 1MHz
Capacitance - pF
V
GS
- Volts
8
6
4
2
0
Coss
1000
Crss
0
50
100
150
200
250
300
350
100
0
5
10
15
20
25
30
35
40
Gate Charge - nC
V
DS
- Volts
Figure 9.
100
80
Forward Voltage Drop of the
Intrinsic Diode
I
D
- Amperes
60
40
T
J
= 125
O
C
20
T
J
= 25
O
C
0
0.2
0.4
0.6
0.8
1.0
V
SD
- Volts
Figure 10. Transient Thermal Resistance
1.00
IXFK55N50/IXFX55N50
R(th)
JC
- K/W
0.10
IXFN55N50
0.01
0.00
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Pulse Width - Seconds
Mouser Electronics
Authorized Distributor
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IXYS
:
IXFN55N50 IXFN50N50
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