IPI045N10N3GXKSA1 datasheet, PDF

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IPI045N10N3GXKSA1: DescriptionMOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3; CategoryDiscrete semiconductor The transistor; File Size1MB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPI045N10N3GXKSA1 Overview

MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3

IPI045N10N3GXKSA1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Infineon
Parts packaging code	TO-262AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	340 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	100 A
Maximum drain-source on-resistance	0.0045 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	400 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

IPI045N10N3GXKSA1 Related Products

	IPI045N10N3GXKSA1	IPP045N10N3GXKSA1	IPB042N10N3GE818XT
Description	MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3	MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3	MOSFET N-Ch 100V 100A D2PAK-2
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	Single
Is it lead-free?	Lead free	Lead free	-
Is it Rohs certified?	conform to	conform to	-
Maker	Infineon	Infineon	-
Parts packaging code	TO-262AA	TO-220AB	-
package instruction	IN-LINE, R-PSIP-T3	FLANGE MOUNT, R-PSFM-T3	-
Contacts	3	3	-
Reach Compliance Code	compliant	compliant	-
ECCN code	EAR99	EAR99	-
Avalanche Energy Efficiency Rating (Eas)	340 mJ	340 mJ	-
Minimum drain-source breakdown voltage	100 V	100 V	-
Maximum drain current (ID)	100 A	100 A	-
Maximum drain-source on-resistance	0.0045 Ω	0.0045 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95 code	TO-262AA	TO-220AB	-
JESD-30 code	R-PSIP-T3	R-PSFM-T3	-
JESD-609 code	e3	e3	-
Number of components	1	1	-
Number of terminals	3	3	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	175 °C	175 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	-
Package form	IN-LINE	FLANGE MOUNT	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum pulsed drain current (IDM)	400 A	400 A	-
Certification status	Not Qualified	Not Qualified	-
surface mount	NO	NO	-
Terminal surface	Tin (Sn)	Tin (Sn)	-
Terminal form	THROUGH-HOLE	THROUGH-HOLE	-
Terminal location	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-
transistor applications	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	-

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