MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| Parts packaging code | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 18 weeks |
| Avalanche Energy Efficiency Rating (Eas) | 340 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 100 A |
| Maximum drain-source on-resistance | 0.0045 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 400 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin (Sn) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| IPP045N10N3GXKSA1 | IPI045N10N3GXKSA1 | IPB042N10N3GE818XT | |
|---|---|---|---|
| Description | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 | MOSFET N-Ch 100V 100A I2PAK-3 OptiMOS 3 | MOSFET N-Ch 100V 100A D2PAK-2 |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | Single |
| Is it lead-free? | Lead free | Lead free | - |
| Is it Rohs certified? | conform to | conform to | - |
| Maker | Infineon | Infineon | - |
| Parts packaging code | TO-220AB | TO-262AA | - |
| package instruction | FLANGE MOUNT, R-PSFM-T3 | IN-LINE, R-PSIP-T3 | - |
| Contacts | 3 | 3 | - |
| Reach Compliance Code | compliant | compliant | - |
| ECCN code | EAR99 | EAR99 | - |
| Avalanche Energy Efficiency Rating (Eas) | 340 mJ | 340 mJ | - |
| Minimum drain-source breakdown voltage | 100 V | 100 V | - |
| Maximum drain current (ID) | 100 A | 100 A | - |
| Maximum drain-source on-resistance | 0.0045 Ω | 0.0045 Ω | - |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - |
| JEDEC-95 code | TO-220AB | TO-262AA | - |
| JESD-30 code | R-PSFM-T3 | R-PSIP-T3 | - |
| JESD-609 code | e3 | e3 | - |
| Number of components | 1 | 1 | - |
| Number of terminals | 3 | 3 | - |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | - |
| Maximum operating temperature | 175 °C | 175 °C | - |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| Package shape | RECTANGULAR | RECTANGULAR | - |
| Package form | FLANGE MOUNT | IN-LINE | - |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | - |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | - |
| Maximum pulsed drain current (IDM) | 400 A | 400 A | - |
| Certification status | Not Qualified | Not Qualified | - |
| surface mount | NO | NO | - |
| Terminal surface | Tin (Sn) | Tin (Sn) | - |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | - |
| Terminal location | SINGLE | SINGLE | - |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | - |
| transistor applications | SWITCHING | SWITCHING | - |
| Transistor component materials | SILICON | SILICON | - |
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