BC848BLT3G datasheet, PDF - EEWORLD Datasheet

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BC848BLT3G: DescriptionBipolar Transistors - BJT 100mA 30V NPN; CategoryDiscrete semiconductor The transistor; File Size108KB，13 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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BC848BLT3G Overview

Bipolar Transistors - BJT 100mA 30V NPN

BC848BLT3G Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ON Semiconductor
Parts packaging code	SOT-23
package instruction	SOT-23, 3 PIN
Contacts	3
Manufacturer packaging code	318-08
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	1 week
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	4.5 pF
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.6 V
Base Number Matches	1

BC848BLT3G Related Products

	BC848BLT3G	NSVBC847BLT3G	BC849CLT1G	BC846ALT3G	SBC846BLT3G
Description	Bipolar Transistors - BJT 100mA 30V NPN	Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V	Bipolar Transistors - BJT 100mA 30V NPN	Bipolar Transistors - BJT 100mA 80V NPN	Bipolar Transistors - BJT SS GP XSTR SPCL TR
Brand Name	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free
package instruction	SOT-23, 3 PIN	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Manufacturer packaging code	318-08	318-08	318-08	318-08	318-08
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	30 V	45 V	30 V	65 V	65 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	200	200	420	110	200
JEDEC-95 code	TO-236	TO-236	TO-236	TO-236	TO-236
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1	1
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	260	260	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W
surface mount	YES	YES	YES	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	NOT SPECIFIED	40	40	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Parts packaging code	SOT-23	-	SOT-23	SOT-23	-
Contacts	3	-	3	3	3
Factory Lead Time	1 week	-	1 week	1 week	-
Certification status	Not Qualified	-	Not Qualified	Not Qualified	-
Base Number Matches	1	1	1	1	-

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