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MJB41C

Description
Bipolar Transistors - BJT 6A 100V 65W NPN
CategoryDiscrete semiconductor    The transistor   
File Size127KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MJB41C Overview

Bipolar Transistors - BJT 6A 100V 65W NPN

MJB41C Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging code418B-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)65 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
MJB41C,
NJVMJB41CT4G (NPN),
MJB42C,
NJVMJB42CT4G (PNP)
Complementary Silicon
Plastic Power Transistors
D
2
PAK for Surface Mount
Features
http://onsemi.com
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Electrically the Same as TIP41 and T1P42 Series
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
Value
100
100
5.0
6.0
10
Unit
Vdc
Vdc
Vdc
Adc
COMPLEMENTARY SILICON
POWER TRANSISTORS
6 AMPERES,
100 VOLTS, 65 WATTS
MARKING
DIAGRAM
D
2
PAK
CASE 418B
STYLE 1
J4xCG
AYWW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎ Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎ Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Continuous
Peak
Base Current
2.0
Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
P
D
65
0.52
W
W/_C
W
W/_C
mJ
_C
P
D
2.0
0.016
62.5
Unclamped Inductive Load Energy (Note 1)
Operating and Storage Junction
Temperature Range
E
T
J
, T
stg
−65
to +150
J4xC
A
Y
WW
G
= Specific Device Code
x = 1 or 2
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
MJB41CG
MJB41CT4G
NJVMJB41CT4G
MJB42CG
MJB42CT4G
NJVMJB42CT4G
Package
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
50 Units / Rail
800 / Tape &
Reel
800 / Tape &
Reel
50 Units / Rail
800 / Tape &
Reel
800 / Tape &
Reel
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJC
R
qJA
R
qJA
T
L
Max
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
1.92
62.5
50
_C/W
_C/W
_C/W
_C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
260
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I
C
= 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V
CC
= 10 V, R
BE
= 100
W
2. When surface mounted to an FR−4 board using the minimum recommended
pad size.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
Rev. 4
1
Publication Order Number:
MJB41C/D

MJB41C Related Products

MJB41C MJB41CT4
Description Bipolar Transistors - BJT 6A 100V 65W NPN Bipolar Transistors - BJT 6A 100V 65W NPN
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Contains lead Contains lead
Maker ON Semiconductor ON Semiconductor
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Manufacturer packaging code 418B-04 418B-04
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 6 A 6 A
Collector-emitter maximum voltage 100 V 100 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 15 15
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e0
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 65 W 65 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz
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