IS61C256AL-12TI datasheet, PDF

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IS61C256AL-12TI: Description32K X 8 STANDARD SRAM, 12 ns, PDSO28; Categorystorage; File Size94KB，12 Pages; ManufacturerISSI(Integrated Silicon Solution Inc.); Websitehttp://www.issi.com/

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IS61C256AL-12TI Overview

32K X 8 STANDARD SRAM, 12 ns, PDSO28

IS61C256AL-12TI Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	28
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	5.5 V
Minimum supply/operating voltage	4.5 V
Rated supply voltage	5 V
maximum access time	12 ns
Processing package description	LEAD FREE, PLASTIC, TSOP1-28
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
Craftsmanship	CMOS
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE, THIN PROFILE
surface mount	Yes
Terminal form	GULL WING
Terminal spacing	0.5500 mm
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
Temperature level	INDUSTRIAL
memory width	8
organize	32K X 8
storage density	262144 deg
operating mode	ASYNCHRONOUS
Number of digits	32768 words
Number of digits	32K
Memory IC type	STANDARD SRAM
serial parallel	PARALLEL

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IS61C256AL

32K x 8 HIGH-SPEED CMOS STATIC RAM

FEATURES

• High-speed access time: 10, 12 ns

• CMOS Low Power Operation

— 1 mW (typical) CMOS standby

— 125 mW (typical) operating

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Single 5V power supply

• Lead-free available

ISSI

OCTOBER 2006

DESCRIPTION

The

ISSI

IS61C256AL is a very high-speed, low power,

32,768 word by 8-bit static RAMs. It is fabricated using

ISSI

's high-performance CMOS technology. This highly

reliable process coupled with innovative circuit design

techniques, yields access times as fast as 10 ns maximum.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down to 150 µW (typical) with CMOS input levels.

Easy memory expansion is provided by using an active

LOW Chip Enable (CE) input and an active LOW Output

Enable (OE) input. The active LOW Write Enable (WE)

controls both writing and reading of the memory.

The IS61C256AL is pin compatible with other 32Kx8 SRAMs

and are available in 28-pin SOJ and TSOP (Type I)

packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A14

DECODER

32K X 8

MEMORY ARRAY

VDD

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. B

10/23/06

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