TPC816 SERIES
Taiwan Semiconductor
200mW, 4 PIN DIP Phototransistor Photocoupler
FEATURES
● Current transfer ratio
(CTR: MIN.80% at I
F
=5mA, V
CE
=5V)
● High isolation voltage between input and output
(Viso=5000V rms)
● High collector-emitter voltage (V
CEO
:70V)
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
CTR
V
CEO
P
tot
I
C
V
iso
Package
Configuration
VALUE
80-600
70
200
50
UNIT
%
V
mW
mA
APPLICATIONS
● Programmable controllers
● System appliances, measuring instruments
● Signal transmission between circuits of different potentials
and impedances
5000
Vrms
DIP-4
DIP-4M
SOP-4
Single Dice
MECHANICAL DATA
● Case: DIP-4 , DIP-4M , SOP-4
● Molding compound: UL flammability classification
rating 94V-0
● Moisture sensitivity level: level 1, per J-STD-020
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 1A whisker test
● Polarity: Indicated by cathode band
1
Version:B1612
TPC816 SERIES
Taiwan Semiconductor
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward current
Input
Peak forward current (Note 1)
Reverse voltage
Power dissipation
Collector-emitter voltage
Output
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Isolation voltage (Note 2)
Operating temperature
Storage temperature
Soldering temperature (Note 3)
Notes:
1. Pulse width≦100ms，Duty ratio：0.001
2. 40 to 60% RH，AC for 1 minute
3. For 10s
SYMBOL
I
F
I
FM
V
R
P
V
CEO
V
ECO
I
C
P
C
P
tot
V
iso
T
opr
T
stg
T
sol
PART NUMBER
50
1
6
70
70
6
50
150
200
5000
-30 to +100
-55 to +125
260
UNIT
mA
A
V
mW
V
V
mA
mW
mW
Vrms
°C
°C
°C
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage
Peak forward voltage
Input
Reverse current
Terminal capacitance
Output
Collector dark current
Current transfer ration
(Note 1)
Collector-emitter
saturation voltage
Transfer
Characteristics
Isolation resistance
Floating capacitance
Cut-off frequency
Response
time
Rise time
Fall time
CONDITIONS
I
F
=20mA
I
FM
=0.5A
V
R
=4V
V=0, f=1kHz
V
CE
=20V,I
F
=0
I
F
=5mA, V
CE
=5V
I
F
=20mA, I
C
=1mA
DC500V,
40 to 60%RH
V=0, f=1MHz
V
CE
=5V, I
C
=2mA,
R
L
=100Ω, -3dB
V
CE
=2V, I
C
=2mA,
R
L
=100Ω
SYMBOL
V
F
V
FM
I
R
C
t
I
CEO
CTR
V
CE(sat)
R
ISO
C
f
f
c
t
r
t
f
5x10
10
MIN
TYP
1.2
MAX
1.4
3.0
10
UNIT
V
V
μA
pF
A
%
V
Ω
30
250
10
-7
80
0.1
10
11
600
0.2
0.6
80
4
3
1.0
pF
KHz
18
18
μs
μs
Notes:
1. Classification table of current transfer ratio is shown below
2
Version:B1612
TPC816 SERIES
Taiwan Semiconductor
RANK TABLE OF CURRENT TRANSFER RATIO, CTR
RANK MARK
A
B
C
D
MIN (%)
80
130
200
300
MAX (%)
160
260
400
600
ORDERING INFORMATION
PART NO.
(Note 1&2)
TPC816x
TPC816Mx
TPC816S1x
PACKING
CODE
C9
C9
RA
G
PACKING CODE
SUFFIX
PACKAGE
DIP-4
DIP-4M
(Leads with 0.4" spacing)
SOP-4
PACKING
100 / TUBE
100 / TUBE
2K / 13" Reel
Notes:
1. “x” defines CTR rank from “A” to “D”
2. Whole series with green compound
EXAMPLE
EXAMPLE P/N
TPC816A C9G
PART NO.
TPC816A
PACKING CODE
C9
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
3
Version:B1612
TPC816 SERIES
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig. 1 Forward Current vs.
Ambient Temperature
60
50
40
30
20
10
0
-30
-15
0
15
30
45
60
75
90
105 120
Collector Power Dissipation, Pc (mW)
200
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
I
F
, Instantaneous Forward Current (mA)
150
100
50
0
-30 -15
0
15
30
45
60
75
90
105 120
Ambient Temperature, Ta (°C)
Ambient Temperature, Ta (°C)
Fig.3 Peak Forward Current vs.
Duty Ratio
10000
1000
Fig.4 Forward Current vs.
Forward Voltage
Peak Forward Current I
FM
(mA)
1000
Forward Current I
F
(mA)
100
75°C
50°C
25°C
10
0°C
100
1
-25°C
10
0.1
1
0.0001
0.01
0.001
0.01
Duty Ratio
0.1
1
0
0.5
1
1.5
2
2.5
3
3.5
Forward Voltage V
F
(V)
4
Version:B1612
TPC816 SERIES
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig. 5 Current Transfer Ratio vs.
Forward Current
200
180
Current Transfer Ratio (%)
160
140
120
100
80
60
40
20
0
1
10
Forward Current I
F
(mA)
100
V
CE
=5V
Collector Current Ic(mA)
50
40
30
20
10
0
0
1
2
3
4
5
6
7
8
9
Collector-Emitter Voltage V
CE
(V)
I
F
=30mA
25mA
20mA
15mA
10mA
60
Fig.6 Collector Current vs.
Collector-Emitter Voltage
5mA
Fig.7 Relative Current Transfer Ratio vs.
Ambient Temperature
150
Relative Current Transfer Ratio (%)
I
F
=5mA
V
CE
=5V
100
Fig.8 Collector-emitter Saturation Voltage vs
Ambient Temperature
0.16
0.14
Collector-Emitter Saturation
Voltage VCE(sat) (A)
0.12
0.1
0.08
0.06
0.04
0.02
I
F
=20mA
I
C
=1mA
50
0
-30
0
30
60
90
120
0
-30
0
30
60
90
120
Ambient Temperature Ta(°C)
Ambient Temperature Ta(°C)
5
Version:B1612
京公网安备 11010802033920号
EEWORLD
