MSD42SWT1G
NPN Silicon General
Purpose High Voltage
Transistor
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
http://onsemi.com
COLLECTOR
3
These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
-
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
300
300
6.0
150
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
2
EMITTER
3
1
2
SC- 70 (SOT- 323)
-
-
CASE 419
STYLE 3
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
150
150
- 55 to +150
-
Unit
mW
C
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
Collector-Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter-Base Breakdown Voltage
(I
E
= 100
mAdc,
I
E
= 0)
Collector-Base Cutoff Current
(V
CB
= 300 Vdc, I
E
= 0)
Emitter-
-Base Cutoff Current
(V
EB
= 6.0 Vdc, I
B
= 0)
DC Current Gain (Note 2)
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc)
(V
CE
= 10 Vdc, I
C
= 30 mAdc)
Collector-Emitter Saturation Voltage
(Note 2) (I
C
= 200 mAdc,
I
B
= 2.0 mAdc)
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Min
300
300
6.0
-
-
-
-
Max
-
-
-
-
-
-
0.1
0.1
Unit
Vdc
Vdc
Vdc
mA
mA
-
-
1
D4 M
G
G
D4 = Device Code
M
= Date Code*
G
= Pb-
-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
†
h
FE1
h
FE2
V
CE(sat)
25
40
-
-
200
-
-
0.5
MSD42SWT1G SC-
-70/SOT-
-323 3000/Tape & Reel
(Pb-
-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width
300
ms,
D.C.
2%.
Semiconductor Components Industries, LLC, 2010
October, 2010 - Rev. 2
1
Publication Order Number:
MSD42SWT1/D
MSD42SWT1G
PACKAGE DIMENSIONS
SC-
-70 (SOT-
-323)
CASE 419--04
ISSUE N
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
H
E
1
2
E
b
e
A
0.05 (0.002)
A1
A2
L
c
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
*For additional information on our Pb-
-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
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2
MSD425WT1/D