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MSD42SWT1

Description
Bipolar Transistors - BJT 150mA 300V NPN
CategoryDiscrete semiconductor    The transistor   
File Size98KB,2 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MSD42SWT1 Overview

Bipolar Transistors - BJT 150mA 300V NPN

MSD42SWT1 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeSC-70
package instructionCASE 419-04, SC-70, 3 PIN
Contacts3
Manufacturer packaging code419-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MSD42SWT1G
NPN Silicon General
Purpose High Voltage
Transistor
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
http://onsemi.com
COLLECTOR
3
These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
-
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
300
300
6.0
150
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
2
EMITTER
3
1
2
SC- 70 (SOT- 323)
-
-
CASE 419
STYLE 3
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
150
150
- 55 to +150
-
Unit
mW
C
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
Collector-Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter-Base Breakdown Voltage
(I
E
= 100
mAdc,
I
E
= 0)
Collector-Base Cutoff Current
(V
CB
= 300 Vdc, I
E
= 0)
Emitter-
-Base Cutoff Current
(V
EB
= 6.0 Vdc, I
B
= 0)
DC Current Gain (Note 2)
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc)
(V
CE
= 10 Vdc, I
C
= 30 mAdc)
Collector-Emitter Saturation Voltage
(Note 2) (I
C
= 200 mAdc,
I
B
= 2.0 mAdc)
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Min
300
300
6.0
-
-
-
-
Max
-
-
-
-
-
-
0.1
0.1
Unit
Vdc
Vdc
Vdc
mA
mA
-
-
1
D4 M
G
G
D4 = Device Code
M
= Date Code*
G
= Pb-
-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
h
FE1
h
FE2
V
CE(sat)
25
40
-
-
200
-
-
0.5
MSD42SWT1G SC-
-70/SOT-
-323 3000/Tape & Reel
(Pb-
-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width
300
ms,
D.C.
2%.
Semiconductor Components Industries, LLC, 2010
October, 2010 - Rev. 2
1
Publication Order Number:
MSD42SWT1/D
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