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3N247

Description
Bridge Rectifiers 100V 1.5A BRIDGE
Categorysemiconductor    Discrete semiconductor   
File Size41KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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Bridge Rectifiers 100V 1.5A BRIDGE

3N247 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerON Semiconductor
Product CategoryBridge Rectifiers
RoHSDetails
TypeSingle Phase Bridge
Mounting StyleThrough Hole
Termination StyleThrough Hole
Package / CaseSIP-4
If - Forward Current1.5 A
Peak Reverse Voltage100 V
Vf - Forward Voltage1.3 V
Max Surge Current50 A
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 165 C
Length15.24 mm
Width5.08 mm
Height12.7 mm
PackagingTube
ProductBridge Rectifiers
Ir - Reverse Current5 uA
Pd - Power Dissipation3.5 W
Factory Pack Quantity30
Vr - Reverse Voltage70 V
Unit Weight0.053546 oz
KBP005M/3N246 - KBP10M/3N252
KBP005M/3N246 - KBP10M/3N252
Features
Surge overload rating: 50 amperes
peak.
Reliable low cost construction utilizing
molded plastic technique.
UL certified, UL #E111753.
+
~ ~
-
KBPM
Bridge Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Value
Parameter
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Average Rectified Forward Current,
@ T
A
= 50°C
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
005M
246
50
35
50
01M
247
100
70
100
02M
248
200
140
200
04M
249
400
280
400
1.5
50
-55 to +165
-55 to +165
06M
250
600
420
600
08M
251
800
560
800
10M
252
1000
700
1000
Units
V
V
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient,* per leg
Parameter
Value
3.5
40
Units
W
°C/W
*
Device mounted on PCB with 0.47 x 0.47" (12 x 12 mm).
Electrical Characteristics
Symbol
V
F
I
R
T
A
= 25°C unless otherwise noted
Parameter
Forward Voltage, per bridge @ 1.0 A
@ 3.14 A
Reverse Current, total bridge @ rated V
R
T
A
= 25°C
T
A
= 100°C
I
2
t rating for fusing
t < 8.35 ms
Total Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
Device
1.0
1.3
5.0
500
10
15
Units
V
V
µA
µA
A
2
s
pF
C
T
2001
Fairchild Semiconductor Corporation
KBP005M/3N246-KBP10M/3N252, Rev. C
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