RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1A1
THRU
1A7
SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
High reliability
Low leakage
Low forward voltage drop
High current capability
R-1
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic black body
Epoxy: Device hasUL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.19 gram
.787 (20.0)
MIN.
.025 (0.65)
DIA.
.021 (0.55)
.126 (3.2)
.106 (2.7)
.102 (2.6)
DIA.
.091 (2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.787 (20.0)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 25
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note)
Typical Thermal Resistance
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
o
@T
A
= 25 C
Maximum DC Reverse Current
o
at Rated DC Blocking Voltage
@T
A
= 100 C
Maximum Full Load Reverse Current Full Cycle Average
.375” (9.5mm) lead length at T
L
= 75
o
C
NOTES : Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
SYMBOL
V
F
1A1
1A2
1A3
1A4
1.1
5.0
50
100
1A5
1A6
1A7
UNITS
Volts
uAmps
uAmps
2002-11
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
R
θ
JA
T
J
, T
STG
1A1
50
35
50
1A2
100
70
100
1A3
200
140
200
1A4
400
280
400
1.0
25
15
60
-55 to + 150
0
1A5
600
420
600
1A6
800
560
800
1A7
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
pF
C/ W
0
C
I
R
RATING AND CHARACTERISTIC CURVES ( 1A1 THRU 1A7 )
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
1.0
.8
.6
.4
.2
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( )
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
AVERAGE FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD
CURRENT, (A)
FIG. 2 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
4
2
1.0
.4
.2
.1
TJ = 25
Pulse Width=300uS
1% Duty Cycle
.04
.02
.01
.6
.8
1.0
1.2
1.4 1.5
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
PEAK FORWARD SURGE CURRENT, (A)
40
30
20
10
0
1
8.3ms Single Half Sine-Wave
(JEDED Method)
INSTANTANEOUS REVERSE
CURRENT, (uA)
FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
10
TJ = 25
1.0
0.1
.01
2
4 6 8 10 20 40 6080100
NUMBER OF CYCLES AT 60Hz
JUNCTION CAPACITANCE, (pF)
0
20 40 60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
2
1
.1
.2 .4
1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
TJ = 25
RECTRON
Microcontroller MCU
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