PD - 94924
IRG4PC30WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Lead-Free
Features
C
V
CES
= 600V
G
E
V
CE(on) max.
=
2.70V
@V
GE
= 15V, I
C
= 12A
n-channel
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
600
23
12
92
92
± 20
180
100
42
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
0.24
6 (0.21)
Max.
1.2
40
Units
°C/W
g (oz)
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12/30/03
IRG4PC30WPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
Emitter-to-Collector Breakdown Voltage
18
Temperature Coeff. of Breakdown Voltage 0.34
2.1
Collector-to-Emitter Saturation Voltage
2.45
1.95
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage
-11
Forward Transconductance
11
16
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Max. Units
Conditions
V
V
GE
= 0V, I
C
= 250µA
V
V
GE
= 0V, I
C
= 1.0A
V/°C V
GE
= 0V, I
C
= 1.0mA
2.7
I
C
= 12A
V
GE
= 15V
I
C
= 23A
See Fig.2, 5
V
I
C
= 12A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
mV/°C V
CE
= V
GE
, I
C
= 250µA
S
V
CE
=
100 V, I
C
= 12A
250
V
GE
= 0V, V
CE
= 600V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 n A V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ.
51
7.6
18
25
16
99
67
0.13
0.13
0.26
24
17
150
150
0.55
13
980
71
18
Max. Units
Conditions
76
I
C
= 12A
11
nC
V
CC
= 400V
See Fig.8
27
V
GE
= 15V
T
J
= 25°C
ns
150
I
C
= 12A, V
CC
= 480V
100
V
GE
= 15V, R
G
= 23Ω
Energy losses include "tail"
mJ See Fig. 10, 11, 13, 14
0.35
T
J
= 150°C,
I
C
= 12A, V
CC
= 480V
ns
V
GE
= 15V, R
G
= 23Ω
Energy losses include "tail"
mJ See Fig. 13, 14
nH
Measured 5mm from package
V
GE
= 0V
pF
V
CC
= 30V
See Fig. 7
= 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 23Ω,
(See fig. 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC30WPbF
40
For both:
Triangular wave:
Load Current ( A )
30
Duty cycle: 50%
T J = 125°C
T sink = 90°C
Gate drive as specified
Power Dissipation = 24W
Clamp voltage:
80% of rated
Square wave:
20
60% of rated
voltage
10
Ideal diodes
0
0.1
1
10
A
100
f, Frequency (kHz)
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 1
- Typical Load Current vs. Frequency
100
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
T
J
= 150
°
C
10
T
J
= 150
°
C
10
T
J
= 25
°
C
T
J
= 25
°
C
1
1
V
GE
= 15V
20µs PULSE WIDTH
1
10
0.1
5.0
V
CC
= 50V
5µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
11.0
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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IRG4PC30WPbF
Maximum DC Collector Current (A
25
V
GE
= 15V
3.0
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 24 A
20
2.5
15
I
C
= 12 A
2.0
10
I
C
=
6A
5
0
25
50
75
100
125
A
150
1.5
-60 -40 -20
0
20 40
60
80 100 120 140 160
T
C
, Case Temperature (°C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC30WPbF
2000
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 12A
16
C, Capacitance (pF)
1500
Cies
1000
12
8
500
Coes
Cres
4
0
0
1
10
100
0
10
20
30
40
50
60
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.5
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
0.4
I
C
= 12A
10
23
Ω
R
G
= Ohm
V
GE
= 15V
V
CC
= 480V
I
C
=
24
A
1
0.3
I
C
=
12
A
I
C
=
0.1
6
A
0.2
0.1
0.0
0
10
20
30
40
50
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
R
, Gate Resistance (Ohm)
G
, Gate Resistance
(Ω)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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