EEWORLDEEWORLDEEWORLD

Part Number

Search

SI7425DN-T1-GE3

Description
MOSFET 12V 12.6A 3.6W 16mohm @ 4.5V
CategoryDiscrete semiconductor    The transistor   
File Size89KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SI7425DN-T1-GE3 Online Shopping

Suppliers Part Number Price MOQ In stock  
SI7425DN-T1-GE3 - - View Buy Now

SI7425DN-T1-GE3 Overview

MOSFET 12V 12.6A 3.6W 16mohm @ 4.5V

SI7425DN-T1-GE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay
package instructionSMALL OUTLINE, S-XDSO-C5
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage12 V
Maximum drain current (Abs) (ID)8.3 A
Maximum drain current (ID)8.3 A
Maximum drain-source on-resistance0.016 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeS-XDSO-C5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)3.6 W
Maximum pulsed drain current (IDM)25 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Si7425DN
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 12
R
DS(on)
(Ω)
0.016 at V
GS
= - 4.5 V
0.022 at V
GS
= - 2.5 V
0.029 at V
GS
= - 1.8 V
I
D
(A)
- 12.6
- 10.8
- 3.5
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFETS: 1.8 V Rated
• New PowerPAK
®
Package
- Low Thermal Resistance, R
thJC
- Low 1.07 mm Profile
APPLICATIONS
PowerPAK 1212-8
• Load Switch
• PA Switch
• Battery Switch
3.30 mm
3.30 mm
S
1
2
3
S
S
S
G
4
G
D
8
7
6
5
D
D
D
Bottom View
Ordering Information:
Si7425DN-T1-E3 (Lead (Pb)-free)
Si7425DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 3.0
3.6
1.9
- 55 to 150
260
- 12.6
- 9.1
- 25
- 1.3
1.5
0.8
W
°C
10 s
±8
- 8.3
- 6.0
A
Steady State
- 12
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
28
65
2.9
Maximum
35
81
3.8
°C/W
Unit
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72400
S-83051-Rev. D, 29-Dec-08
www.vishay.com
1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号