MOSFET Power FREDFET - MOS8
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Contacts | 3 |
Reach Compliance Code | compliant |
Other features | AVALANCHE RATED, HIGH RELIABILITY |
Avalanche Energy Efficiency Rating (Eas) | 930 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 500 V |
Maximum drain current (ID) | 42 A |
Maximum drain-source on-resistance | 0.13 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSSO-G2 |
JESD-609 code | e3 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | 245 |
Polarity/channel type | N-CHANNEL |
Maximum pulsed drain current (IDM) | 135 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | PURE MATTE TIN |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | 30 |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |