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2N6288

Description
Bipolar Transistors - BJT NPN Pwr SW
CategoryDiscrete semiconductor    The transistor   
File Size416KB,3 Pages
ManufacturerCentral Semiconductor
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2N6288 Overview

Bipolar Transistors - BJT NPN Pwr SW

2N6288 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-220AB
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)7 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)16 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
Base Number Matches1

2N6288 Related Products

2N6288 2N6290
Description Bipolar Transistors - BJT NPN Pwr SW Bipolar Transistors - BJT NPN Power SW
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Parts packaging code TO-220AB TO-220AB
package instruction TO-220, 3 PIN TO-220, 3 PIN
Contacts 3 3
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 7 A 7 A
Collector-emitter maximum voltage 30 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 30 30
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 16 W 16 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 4 MHz 4 MHz
Base Number Matches 1 1

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