APTMC120HRM40CT3AG
Phase Leg & Dual Common Emitter
Power Module
SiC MOSFET (Q1, Q2):
V
CES
= 1200V ; R
DSon
= 34mΩ max @ Tj = 25°C
Trench & Field Stop IGBT3 (Q3, Q4):
V
CES
= 600V ; I
C
= 50A @ Tc = 100°C
Application
•
Solar converter
•
Uninterruptible Power Supplies
Features
•
Q1, Q2 SiC Power MOSFET
- Low R
DS(on)
- High temperature performance
•
Q3, Q4 Trench + field Stop IGBT3
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
-
-
-
-
•
•
•
•
SiC Schottky Diode (CR1 to CR4)
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
•
Kelvin emitter for easy drive
Very low stray inductance
AlN substrate for improved thermal performance
Internal thermistor for temperature monitoring
All multiple inputs and outputs must be shorted together
10/11 ; 23/24 ; 2/3 ; …
Benefits
•
Stable temperature behavior
•
Very rugged
•
Solderable terminals for easy PCB mounting
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Easy paralleling due to positive T
C
of V
CEsat
•
Low profile
All ratings @ T
j
= 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
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APTMC120HRM40CT3AG – Rev 0
July, 2015
APTMC120HRM40CT3AG
1. SiC MOSFET characteristics (Per MOSFET)
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
Parameter
Drain - Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate - Source Voltage
Drain - Source ON Resistance
Power Dissipation
T
c
= 25°C
T
c
= 80°C
Max ratings
1200
73
55
140
-10/+25
34
375
Unit
V
A
V
mΩ
W
T
c
= 25°C
Electrical Characteristics
Symbol Characteristic
Zero Gate Voltage Drain Current
I
DSS
R
DS(on)
V
GS(th)
I
GSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V , V
DS
= 1200V
T
j
= 25°C
V
GS
= 20V
I
D
= 50A
T
j
= 150°C
V
GS
= V
DS
, I
D
= 12.5mA
V
GS
= 20 V, V
DS
= 0V
Min
Typ
25
43
3
Max
100
34
Unit
µA
mΩ
V
nA
2.4
600
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
R
thJC
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Junction to Case Thermal Resistance
Test Conditions
V
GS
= 0V
V
DS
= 1000V
f = 1MHz
V
GS
= -5/20V
V
Bus
= 800V
I
D
=50A
V
GS
= -2/+20V
V
Bus
= 800V
I
D
= 50A
R
L
= 16Ω ; R
G
= 20Ω
Inductive Switching
Min
Typ
2788
220
15
161
46
50
21
19
50
30
Max
Unit
pF
nC
ns
V
GS
= -5/+20V
V
Bus
= 600V
I
D
= 50A
R
G
= 20Ω
T
j
= 150°C
T
j
= 150°C
1.1
mJ
0.6
0.4
°C/W
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2 - 11
APTMC120HRM40CT3AG – Rev 0
July, 2015
APTMC120HRM40CT3AG
SiC diode ratings and characteristics (CR1 & CR2) (per diode)
Symbol Characteristic
V
RRM
Peak Repetitive Reverse Voltage
I
RM
I
F
V
F
Q
C
C
R
thJC
Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Total Capacitive Charge
Total Capacitance
Junction to Case Thermal Resistance
I
F
= 10A
Test Conditions
V
R
= 1200V
T
j
= 25°C
T
j
= 175°C
Tc = 100°C
Min
Typ
10
500
10
1.5
2.3
120
115
85
Max
1200
200
Unit
V
µA
A
T
j
= 25°C
T
j
= 175°C
I
F
= 10A, V
R
= 600V
di/dt = 500A/µs
f = 1MHz, V
R
= 200V
f = 1MHz, V
R
= 400V
1.8
V
nC
pF
1.1
°C/W
2. Trench & Field Stop IGBT3 (per IGBT)
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 25°C
T
J
= 150°C
Max ratings
600
105
50
100
±20
176
100A @ 550V
Unit
V
A
V
W
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V, V
CE
= 600V
T
j
= 25°C
V
GE
=15V
I
C
= 50A
T
j
= 150°C
V
GE
= V
CE
, I
C
= 600µA
V
GE
= 20V, V
CE
= 0V
Min
Typ
1.5
1.7
5.8
Max
25
1.9
6.5
600
Unit
µA
V
V
nA
5.0
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3 - 11
APTMC120HRM40CT3AG – Rev 0
July, 2015
APTMC120HRM40CT3AG
Dynamic Characteristics
Symbol Characteristic
C
ies
C
oes
C
res
Q
G
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
I
sc
R
thJC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Short Circuit data
Junction to Case Thermal Resistance
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
V
GE
= ±15V, I
C
= 50A
V
CE
= 300V
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 50A
R
G
= 8.2Ω
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 50A
R
G
= 8.2Ω
T
j
= 25°C
V
GE
= ±15V
T
j
= 150°C
V
Bus
= 300V
I
C
= 50A
T
j
= 25°C
R
G
= 8.2Ω
T
j
= 150°C
V
GE
≤15V
; V
Bus
= 360V
t
p
≤10µs
; T
j
= 150°C
Min
Typ
3150
200
95
500
110
45
200
40
120
50
250
60
0.2
0.26
1.35
1.75
250
0.68
Max
Unit
pF
nC
ns
ns
mJ
mJ
A
°C/W
3. SiC diode ratings and characteristics (CR3 & CR4) (per diode)
Symbol Characteristic
V
RRM
Peak Repetitive Reverse Voltage
I
RM
I
F
V
F
Q
C
C
R
thJC
Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Total Capacitive Charge
Total Capacitance
Junction to Case Thermal Resistance
I
F
= 20A
Test Conditions
V
R
= 600V
T
j
= 25°C
T
j
= 175°C
Tc = 100°C
Min
Typ
20
40
20
1.6
2
56
130
100
Max
600
120
600
1.8
2.4
Unit
V
µA
A
V
nC
pF
T
j
= 25°C
T
j
= 175°C
I
F
= 20A, V
R
= 600V
di/dt = 800A/µs
f = 1MHz, V
R
= 200V
f = 1MHz, V
R
= 400V
1.1
°C/W
July, 2015
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4 - 11
APTMC120HRM40CT3AG – Rev 0
APTMC120HRM40CT3AG
4. Temperature sensor NTC
Symbol
R
25
ΔR
25
/R
25
ΔB/B
B
25/100
Characteristic
Resistance @ 25°C
Resistance tolerance
Beta tolerance
T
25
= 298.16 K
R
T
=
R
25
⎡
⎛
1
1
⎞⎤
exp
⎢
B
25 / 100
⎜
− ⎟⎥
⎜
T
⎟
⎢
⎝
25
T
⎠⎥
⎦
⎣
T: Thermistor temperature
R
T
: Thermistor value at T
Min
Typ
22
Max
5
3
Unit
kΩ
%
K
3980
5. Thermal and package characteristics
Symbol Characteristic
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
SiC MOSFET
T
J
Operating junction temperature range
SiC diode + IGBT
T
JOP
Recommended junction temperature under switching conditions
T
STG
Storage Temperature Range
T
C
Operating Case Temperature
Torque Mounting torque
To heatsink
M4
Wt
Package Weight
Min
4000
-40
-40
-40
-40
-40
2
Max
150
175
T
J
max -25
125
125
3
110
Unit
V
°C
N.m
g
Package outline (dimensions in mm)
See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com
www.microsemi.com
5 - 11
APTMC120HRM40CT3AG – Rev 0
July, 2015
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