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SSM6N37FE,LM

Description
MOSFET SM Sig MOS 2 in 1 N-Ch 0.25A 20V -10V
Categorysemiconductor    Discrete semiconductor   
File Size206KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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SSM6N37FE,LM Overview

MOSFET SM Sig MOS 2 in 1 N-Ch 0.25A 20V -10V

SSM6N37FE,LM Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerToshiba Semiconductor
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseES6-6
Number of Channels2 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage20 V, 20 V
Id - Continuous Drain Current250 mA, 250 mA
Rds On - Drain-Source Resistance2.2 Ohms, 2.2 Ohms
Vgs th - Gate-Source Threshold Voltage0.35 V, 0.35 V
Vgs - Gate-Source Voltage4.5 V, 4.5 V
Maximum Operating Temperature+ 150 C
ConfigurationDual
Pd - Power Dissipation150 mW
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height0.55 mm
Length1.6 mm
Transistor Type2 N-Channel
Width1.2 mm
Factory Pack Quantity4000
Typical Turn-Off Delay Time36 ns, 36 ns
Typical Turn-On Delay Time18 ns, 18 ns
Unit Weight0.001270 oz
SSM6N37FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N37FE
High-Speed Switching Applications
Analog Switching Applications
1.5-V drive
Suitable for high-density mounting due to compact package
1.6±0.05
1.0±0.05
0.5 0.5
単½:
mm
1.6±0.05
1.2±0.05
Low ON-resistance
5
4
3
0.55±0.05
Characteristic
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
±
10
250
500
150
150
−55
to 150
Unit
V
V
mA
mW
°C
°C
1.Source1
2.Gate1
4.Source2
5.Gate2
6.Drain1
ES6
JEDEC
JEITA
TOSHIBA
3.Drain2
2-2N1D
Weight: 3.0 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
2
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 0.135 mm
×
6)
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
SU
1
2
3
1
Q1
Q2
2
3
Start of commercial production
2009-12
1
2014-03-01
0.12±0.05
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
0.2±0.05
R
DS(ON)
= 5.60
(max) (@V
GS
= 1.5 V)
R
DS(ON)
= 4.05
(max) (@V
GS
= 1.8 V)
R
DS(ON)
= 3.02
(max) (@V
GS
= 2.5 V)
R
DS(ON)
= 2.20
(max) (@V
GS
= 4.5 V)
1
2
6

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