HEXFET㈢Power MOSFET
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | International Rectifier （ Infineon ） |
| Parts packaging code | TO-251AA |
| package instruction | LEAD FREE, PLASTIC, IPAK-3 |
| Contacts | 3 |
| Reach Compliance Code | _compli |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Avalanche Energy Efficiency Rating (Eas) | 170 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 150 V |
| Maximum drain current (Abs) (ID) | 24 A |
| Maximum drain current (ID) | 24 A |
| Maximum drain-source on-resistance | 0.095 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-251AA |
| JESD-30 code | R-PSIP-T3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 140 W |
| Maximum pulsed drain current (IDM) | 96 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrie |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| IRFU24N15DPBF | IRFR24N15DPBF | |
|---|---|---|
| Description | HEXFET㈢Power MOSFET | HEXFET㈢Power MOSFET |
| Is it Rohs certified? | conform to | conform to |
| Maker | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
| Parts packaging code | TO-251AA | TO-252AA |
| package instruction | LEAD FREE, PLASTIC, IPAK-3 | LEAD FREE, PLASTIC, DPAK-3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | _compli | not_compliant |
| ECCN code | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 170 mJ | 170 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 150 V | 150 V |
| Maximum drain current (Abs) (ID) | 24 A | 24 A |
| Maximum drain current (ID) | 24 A | 24 A |
| Maximum drain-source on-resistance | 0.095 Ω | 0.095 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-251AA | TO-252AA |
| JESD-30 code | R-PSIP-T3 | R-PSSO-G2 |
| JESD-609 code | e3 | e3 |
| Humidity sensitivity level | 1 | 1 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 140 W | 140 W |
| Maximum pulsed drain current (IDM) | 96 A | 96 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | YES |
| Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrie | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal form | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | 30 | 30 |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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