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TSM4433DCSRL

Description
20V Dual P-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size297KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSM4433DCSRL Overview

20V Dual P-Channel MOSFET

TSM4433DCSRL Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresULTRA-LOW RESISTANCE
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)3.9 A
Maximum drain-source on-resistance0.09 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)10 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

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