). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
www.vishay.com
1
Si5480DU
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 8.6 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 8.6 A, V
GS
= 0 V
0.85
20
15
13
7
T
C
= 25 °C
12
30
1.2
40
30
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.7
Ω
I
D
≅
8.6 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.7
Ω
I
D
≅
8.6 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10.7 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10.7 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
1230
210
115
22.5
11
4.4
3.7
5.9
100
140
35
15
10
10
40
8
150
210
55
25
15
15
60
15
ns
Ω
34
17
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 1 mA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.2 A
V
GS
= 4.5 V, I
D
= 6.1 A
V
DS
= 15 V, I
D
= 7.2 A
30
0.013
0.018
23
0.016
0.022
1
30
33
- 6.2
3
± 100
1
10
V
mV/°C
V
ns
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
Si5480DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 10 thru 5
V
24
I
D
- Drain C
u
rrent (A)
30
4
V
24
I
D
- Drain C
u
rrent (A)
18
18
T
C
= 125 °C
12
12
6
2
V
6
3
V
T
C
= 25 °C
T
C
= - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.030
1800
Transfer Characteristics
R
DS(on)
- On-Resistance (mΩ)
0.026
C - Capacitance (pF)
1500
C
iss
1200
0.022
V
GS
= 4.5
V
0.018
900
600
C
oss
300
0.014
V
GS
= 10
V
0.010
0
6
12
18
24
30
0
0
C
rss
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10.7 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
8
R
DS(on)
- On-Resistance
(
N
ormalized)
1.4
1.2
1.0
0.8
0.6
0
0
5
10
15
20
25
0.4
- 50
1.8
1.6
V
GS
= 10
V
I
D
= 7.2 A
Capacitance
6
V
DS
= 15
V
4
V
DS
= 24
V
2
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si5480DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
R
DS(on)
- Drain-to-So
u
rce On-Resistance (mΩ)
0.05
I
D
= 7.2 A
0.04
T
J
= 150 °C
I
S
- So
u
rce C
u
rrent (A)
10
T
A
= 125 °C
0.03
T
J
= 25 °C
0.02
T
A
= 25 °C
0.01
0
2
4
6
8
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.6
2.4
2.2
2.0
1.8
1.6
1.4
10
1.2
1.0
- 50
0
0.001
I
D
= 250
µA
Po
w
er (
W
)
40
50
On-Resistance vs. Gate-to-Source Voltage
V
GS(th)
(
V
)
30
20
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
BVDSS Limited
100
µs
10
I
D
- Drain C
u
rrent (A)
1 ms
1
10 ms
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
10 s
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73585
S-81448-Rev. B, 23-Jun-08
Si5480DU
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
35
30
32
Po
w
er Dissipation (
W
)
25
20
15
10
5
0
0
25
50
75
100
125
150
25
50
75
100
125
150
I
D
- Drain C
u
rrent (A)
24
16
Package Limited
8
0
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
Recently, when I was tuning the srio communication of 6672 and using nwrite to send data, a 6672 chip had data misalignment. Specific phenomenon: 1024 sequential numbers 0-255 0-255 0-255 0-255 were s...
1. Introduction to the original plan
The original solution uses Zigbee+wifi relay and 8266+cc2530X2. The 2530 blankets on the blanket continuously collect data, which consumes a lot of power. In the i...
sgf201onsemi and Avnet IoT Innovation Design Competition
Consumers are demanding more power, smaller size, and higher efficiency from their home appliances, garden tools, and motor-driven products. Like many consumer electronics products, consumers expect t...
Nuvoton's MCUs all provide ISP functions, and provide related tools and programs. Often, due to the complexity of the information and the urgency of the project, it is impossible to slowly study its I...
LAUNCHXL-CC2640R2Supports the latest Bluetooth 5 2Mbps high-speed mode
Connect LaunchPad to the cloud via Bluetooth Low Energy on your smartphone
Access to all I/O signals through BoosterPack connecto...
The overall circuit structure block diagram is shown as follows: Figure 1-1 Thermometer circuit overall design block diagram 3.2 System Design ①Hardware design The hardware circuit design uses the ...[Details]
China Energy Storage Network News:
On March 2, at a construction site next to the Italian style area in Tianjin, a tower crane was rising and falling. The Tianjin Carbon Peak and Carbon Neu...[Details]
To replace HID with LEDs in street and area lighting applications and produce equivalent light output, large arrays of LEDs are required. To drive these large arrays of LEDs, designers can choose dif...[Details]
PWM rectifier technology has strong advantages in suppressing harmonics and reactive power compensation. It has the advantages of grid-side current input close to sine, controllable grid-side power...[Details]
C51:
1. Header file: #include reg52.h (I use STC 89C54RD+)
2. Predefined: sbit LED = P1^0 // Define bit 0 of port P1 as LED
Note: The writing of "P1^0" is different from A51 (A51 is P1.0). P1 ...[Details]
In order to promote the high-end, intelligent and green development of enterprises, Longfeng Paper Industry in Puyang, Henan Province cooperated with Aopu Energy Technology to build a smart ene...[Details]
Abstract: Light intensity is an important indicator of environmental monitoring parameters. This paper uses the light intensity
sensor
TSL2561
and JN5139
wireless chip
t...[Details]
I believe that people who love photography have heard that you should not take a camera to shoot the sun, as this will damage the sensor and other components. So is this a rumor or a real case? Can w...[Details]
Based on the keywords such as "unmanned vehicle, unmanned driving, and autonomous driving " in Chinese, English, German, Japanese, Korean, French, and Italian, Zoss Automotive Research searched the...[Details]
MoneyDJ quoted Bloomberg as reporting that Broadcom CEO Tan Hock Eng said in a financial report conference call on the 4th that customers are placing additional chip orders at an unprecedented rate, ...[Details]
NXP Semiconductors (NASDAQ: NXPI) recently announced the launch of the LPC1500 microcontroller family, which is optimized for fast, easy and high-precision motor control. The new microcontroller inte...[Details]
As the foundation and one of the three pillars of information technology, sensor technology has become the basic hardware and necessary condition for the Internet of Everything with the development o...[Details]
Qualcomm Technologies, Inc., a subsidiary of Qualcomm Incorporated, today announced at the Augmented World Expo (AWE) that it will work with global operators, smartphone manufacturers and XR Viewer m...[Details]
As a basic test instrument, the oscilloscope was once a pet in university laboratories. At that time, 20 to 30 students in a laboratory gathered around an oscilloscope to listen to the teacher's ex...[Details]
1 Introduction With the rapid development of computer technology, the hardware components used in computer systems are basically large-scale and ultra-large-scale integrated circuits. The design, ver...[Details]
DSP and ARM Processors
京公网安备 11010802033920号
EEWORLD
