DMP3036SSD
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-30V
R
DS(on) max
20mΩ @ V
GS
= -10V
29mΩ @ V
GS
= -5V
I
D
T
C
= +25°C
-18.0A
-15.0A
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
NEW PRODUCT
NEW PRODUCT
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(on)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.074 grams (Approximate)
Applications
DC-DC Converters
Power Management Functions
Backlighting
SO-8
SO-8
D1
D1
D1
D2
D2
D2
S1
Pin1
G1
S2
G2
Top View
Top View
Pin Configuration
G1
S1
G2
S2
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP3036SSD-13
Notes:
Case
SO-8
Packaging
2,500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
8
5
P 3036SD
YY WW
= Manufacturer’s Marking
P3036SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
1
4
DMP3036SSD
Document number: DS37349 Rev.1 - 2
1 of 6
www.diodes.com
November 2014
© Diodes Incorporated
DMP3036SSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= -10V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.3mH
Avalanche Energy (Note 7) L = 0.3mH
T
C
= +25°C
T
C
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
I
AS
E
AS
Value
-30
±25
-18.0
-14.3
-10.6
-8.5
-80
-3.6
-17.5
64
Unit
V
V
A
A
A
A
A
mJ
NEW PRODUCT
NEW PRODUCT
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
Symbol
P
D
R
JA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.2
0.9
104
45
1.7
1.1
72
37
13
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-30
-
-
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-1.7
16
22
-0.7
1931
226
168
10.9
8.8
16.5
2.6
3.6
8.2
14
65
31.6
Max
-
-1.0
±100
-3.0
20
29
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -1mA
V
DS
= -30V, V
GS
= 0V
V
GS
= ±25V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -9A
V
GS
= -5V, I
D
= -7A
V
GS
= 0V, I
S
= -1A
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -15V, I
D
= -10A
V
DS
= -15V, I
D
= -10A
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at V
GS
= -5V
Total Gate Charge at V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
GEN
= -10V, V
DD
= -15V,
R
GEN
= 3Ω, I
D
= -10A
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP3036SSD
Document number: DS37349 Rev.1 - 2
2 of 6
www.diodes.com
November 2014
© Diodes Incorporated
DMP3036SSD
30
V
GS
= -3.5V
30
V
DS
= -5.0V
25
25
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -5.0V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
20
20
15
V
GS
= -10V
V
GS
= -3.0V
15
T
A
= 150°C
10
10
T
A
= 125°C
T
A
= 85°C
NEW PRODUCT
NEW PRODUCT
5
V
GS
= -2.5V
V
GS
= -2.0V
5
T
A
= 25°C
T
A
= -55 C
°
0
0
1
2
3
4
V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0
0
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
I
D
= -10A
5
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.03
0.028
0.026
0.024
0.022
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
0
0
V
GS
= -10V
V
GS
= -20V
V
GS
= -5.0V
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
5
I
D
= -5A
I
D
= -11A
5
10
15
20
25
30
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
15
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
25
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE (
)
0.04
V
GS
= -4.5V
1.6
R
DS(ON)
, DRAI N-SO URCE
ON-RESISTANCE (NORMALIZED)
V
GS
= -20V
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0
5
10
15
20
25
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
T
A
= 125°C
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
1.4
I
D
= -10A
1.2
V
GS
= -10V
1
I
D
= -5A
0.8
V
GS
= -5V
I
D
= -3A
0.6
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
-25
DMP3036SSD
Document number: DS37349 Rev.1 - 2
3 of 6
www.diodes.com
November 2014
© Diodes Incorporated
DMP3036SSD
0.03
R
DS(o n)
, DRAIN-SOURCE O N-RESI STANCE (
)
V
GS(TH)
, G ATE THRESHO LD VO LTAGE (V)
V
GS
= -5.0V
I
D
= -3.0A
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50
I
D
= -250µA
I
D
= -1mA
0.025
V
GS
= -10.0V
I
D
= -5.0A
0.02
0.015
V
GS
= -20.0V
I
D
= -10.0A
0.01
NEW PRODUCT
NEW PRODUCT
0.005
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
30
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
T
A
= 150°C
I
DSS
, LEAKAGE CURRENT (nA)
25
1000
T
A
= 125°C
I
S
, SOURCE CURRENT (A)
20
T
A
= 150°C
100
T
A
= 85°C
15
T
A
= 125°C
10
T
A
= 25°C
10
T
A
= 85°C
1
5
T
A
= -55°C
T
A
= 25°C
0.1
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
f = 1MHz
1.5
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Drain-Source Leakage Current
vs. Voltage
10000
10
V
GS
GATE THRESHOLD VOLTAGE (V)
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
8
V
DS
= -15V
I
D
= -10A
1000
6
C
oss
4
100
C
rss
2
10
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 Typical Junction Capacitance
30
0
0
2
4
6
8 10 12 14 16
Q
g
, TOTAL GATE CHARGE (nC)
Figure 12 Gate Charge
18
20
DMP3036SSD
Document number: DS37349 Rev.1 - 2
4 of 6
www.diodes.com
November 2014
© Diodes Incorporated
DMP3036SSD
1
D=
r(t), TRANSIENT THERMAL RESISTANCE
0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
NEW PRODUCT
NEW PRODUCT
0.01
D = 0.01
D = 0.005
R
thja
(t) = r(t) * R
thja
R
thja
= 104°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
10
100
1000
Single Pulse
0.001
0.00001
0.0001
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
45
°
A2 A A3
e
D
b
7
°~
9
°
Detail ‘A’
SO-8
Dim
Min
Max
A
-
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
-
0.35
L
0.62
0.82
0
8
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
0.254
C1
C2
Y
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
DMP3036SSD
Document number: DS37349 Rev.1 - 2
5 of 6
www.diodes.com
November 2014
© Diodes Incorporated
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