TLP560G
TOSHIBA Photocoupler
GaAs Ired & Photo−Triac
TLP560G
Triac Driver
Programmable Controllers
AC−Output Module
Solid State Relay
Unit in mm
The TOSHIBA TLP560G consists of a photo−triac optically coupled to a
gallium arsenide infrared emitting diode in a six lead plastic DIP
package.
•
•
•
•
•
•
Peak off−state voltage: 400V(min.)
On−state current: 100mA(max.)
Isolation voltage: 2500V
rms
(min.)
UL recognized: File No. E67349
Isolation operating voltage: 2500V
ac
or 300V
dc
for isolation
group C*
1
Trigger LED current
Trigger LED Current (mA)
V
T
= 6V, Ta = 25°C
Min.
Max.
―
―
―
5
7
10
T5
T5, T7
T5, T7, blank
TOSHIBA
Weight: 0.39g
11−7A9
Classi−
fication*
(IFT5)
(IFT7)
Standard
Marking of
Classification
*Ex. (IFT5); TLP560G(IFT5)
(Note) Application type name for certification test, please
use standard product type name, i.e.
TLP560G(IFT5): TLP560G
*1: According to VDE0110, table 4.
Pin Configuration
(top view)
1
2
3
4
1 : Anode
2 : Cathode
3 : N.C.
4 : Terminal 1
6 : Terminal 2
6
1
2007-10-01
TLP560G
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta
≥
53°C)
LED
Peak forward current (100μs pulse, 100pps)
Reverse voltage
Junction temperature
Off−state output terminal voltage
On−state RMS current
Detector
Ta = 25°C
Ta = 70°C
Symbol
I
F
ΔI
F
/ °C
I
FP
V
R
T
j
V
DRM
I
T(RMS)
ΔI
T
/ °C
I
TP
I
TSM
T
j
T
stg
T
opr
T
sol
BV
S
Rating
50
−0.7
1
5
125
400
100
50
−1.1
2
1.2
115
−55~125
−40~100
260
2500
Unit
mA
mA / °C
A
V
°C
V
mA
mA / °C
A
A
°C
°C
°C
°C
V
rms
On−state current derating (Ta
≥
25°C)
Peak on−state current (100μs pulse, 120pps)
Peak nonrepetitive surge current
(Pw = 10ms, DC = 10%)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10s)
Isolation voltage (AC, 1min., R.H.
≤
60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Peak on−state current
Operating temperature
Symbol
V
AC
I
F
I
TP
T
opr
Min.
―
15
―
−25
Typ.
―
20
―
―
Max.
120
25
1
85
Unit
V
ac
mA
A
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01
TLP560G
60
I
F
– Ta
120
I
T(RMS)
– Ta
Allowable forward current
I
F
(mA)
40
R. M. S. on-state current
I
T
(RMS) (mA)
0
20
40
100
120
50
100
80
30
60
20
40
10
20
0
-20
60
80
0
-20
0
20
40
60
80
100
120
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
100
50
Ta = 25℃
I
FP
– D
R
(mA)
3000
PULSE WIDTH
≤
100μs
Ta = 25℃
I
F
– V
F
I
FP
I
F
(mA)
Forward current
1000
500
300
30
pulse forward current
10
5
3
100
50
30
1
0.5
0.3
0.1
0.6
Allowable
10
3
10
–
3
3
10
–
2
3
10
–
1
3
10
0
0.8
1.0
1.2
1.4
1.6
1.8
Duty cycle
ratio DR
Forward
voltage VF (V)
Δ
V
F
/Δ
Ta
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.1
– I
F
1000
I
FP
– V
FP
Pulse forward current I
FP
(mA)
500
300
Forward voltage temperature
coefficient
ΔV
F
/ΔTa (mV/℃)
100
50
30
10
5
3
1
0.6
PULSE WIDTH
≤
10μs
REPETITIVE
FREQUENCY=100Hz
Ta = 25℃
1.0
1.4
1.8
2.2
2.6
0.3
1
3
10
30
Forward
current
I
F
(mA)
Pulse forward
voltage VFP (V)
4
2007-10-01
京公网安备 11010802033920号
EEWORLD
