TC74HCT08AP/AF/AFN
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74HCT08AP,TC74HCT08AF,TC74HCT08AFN
Quad 2-Input AND Gate
The TC74HCT08A is a high speed CMOS 2-INPUT AND
GATE fabricated with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
This device may be used as a level converter for interfacing
TTL or NMOS to High Speed CMOS. The inputs are compatible
with TTL, NMOS and CMOS output voltage levels.
The internal circuit is composed of 4-stages including buffer
output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74HCT08AP
TC74HCT08AF
Features
•
•
•
•
•
•
•
•
High speed: t
pd
= 10 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 1
μA
(max) at Ta = 25°C
Compatible with TTL outputs: V
IH
= 2 V (min)
V
IL
= 0.8 V (max)
Wide interfacing ability: LSTTL, NMOS, CMOS
Output drive capability: 10 LSTTL loads
Symmetrical output impedance: |I
OH
| = I
OL
= 4 mA (min)
∼
Balanced propagation delays: t
pLH
−
t
pHL
Pin and function compatible with 74LS08
TC74HCT08AFN
Pin Assignment
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
SOL14-P-150-1.27
: 0.96 g (typ.)
: 0.18 g (typ.)
: 0.12 g (typ.)
1
2007-10-01
TC74HCT08AP/AF/AFN
IEC Logic Symbol
Truth Table
A
L
L
H
H
B
L
H
L
H
Y
L
L
L
H
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5~7
−0.5~V
CC
+
0.5
−0.5~V
CC
+
0.5
±20
±20
±25
±50
500 (DIP) (Note 2)/180 (SOP)
−65~150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta
= −40
to 65°C. From Ta
=
65 to 85°C a derating factor of
−10
mW/°C shall be
applied until 300 mW
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
t
r
, t
f
Rating
4.5~5.5
0~V
CC
0~V
CC
−40~85
0~500
Unit
V
V
V
°C
ns
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
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2007-10-01
TC74HCT08AP/AF/AFN
Electrical Characteristics
DC Characteristics
Characteristics
High-level input
voltage
Low-level input
voltage
High-level output
voltage
Low-level output
voltage
Input leakage
current
Symbol
Test Condition
V
CC
(V)
⎯
⎯
I
OH
= −20 μA
V
IN
=
V
IH
or V
IL
I
OH
= −4
mA
I
OL
=
20
μA
V
IN
=
V
IH
or V
IL
I
=
4 mA
OL
V
IN
=
V
CC
or GND
V
IN
=
V
CC
or GND
Per input: V
IN
=
0.5 V or 2.4
V
Other input: V
CC
or GND
4.5~5.5
4.5~5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
Min
2.0
⎯
4.4
4.18
⎯
⎯
⎯
⎯
⎯
Ta
=
25°C
Typ.
⎯
⎯
4.5
4.31
0.0
0.17
⎯
⎯
⎯
Max
⎯
0.8
⎯
⎯
0.1
0.26
±0.1
1.0
2.0
Ta
= −40~85°C
Min
2.0
⎯
4.4
4.13
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.8
⎯
⎯
0.1
0.33
±1.0
10.0
2.9
Unit
V
IH
V
IL
V
OH
V
V
V
V
OL
I
IN
I
CC
V
μA
μA
mA
Quiescent supply
current
I
C
AC Characteristics
(C
L
=
15 pF, V
CC
=
5 V, Ta
=
25°C, input: t
r
=
t
f
=
6 ns)
Characteristics
Output transition time
Symbol
t
TLH
t
THL
t
pLH
t
pHL
Test Condition
⎯
Min
⎯
Typ.
6
Max
12
Unit
ns
Propagation delay time
⎯
⎯
10
16
ns
AC Characteristics
(C
L
=
50 pF, input: t
r
=
t
f
=
6 ns)
Characteristics
Symbol
t
TLH
t
THL
t
pLH
t
pHL
C
IN
C
PD
(Note)
Test Condition
V
CC
(V)
⎯
4.5
5.5
4.5
5.5
⎯
⎯
Min
⎯
⎯
⎯
⎯
⎯
⎯
Ta
=
25°C
Typ.
8
7
13
11
5
24
Max
15
13
20
18
10
⎯
Ta
= −40~85°C
Min
⎯
⎯
⎯
⎯
⎯
⎯
Max
19
16
25
23
10
⎯
Unit
Output transition time
Propagation delay
time
Input capacitance
Power dissipation
capacitance
ns
⎯
ns
pF
pF
Note:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC
(opr)
=
C
PD
½V
CC
½f
IN
+
I
CC
/4 (per gate)
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2007-10-01