SF32 datasheet, PDF - EEWORLD Datasheet

SF32: DescriptionSuper Fast Rectifier Super fast recovery diode; CategoryDiscrete semiconductor; File Size774KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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Super Fast Rectifier Super fast recovery diode

Features

Product Name: Super Fast Rectifier Super Fast Recovery Diode

Product model: SF32

product features:

Io: 3.0A

VRRM: 50V-600V

High forward surge current capability

High surge current capability

use:

Rectifier

product data:

Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 100V

Average Forward Current IF(AV) Average forward current: 3.0A

Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 125A

Junction Temperature TJ Junction temperature: -55 to +125 ℃

Storage Temperature TSTG storage temperature: -55 to +150 ℃

Peak Forward Voltage (IFM=3.0A) VFM Forward peak voltage: 0.95V

Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 5μA

IRRM2 (Ta=125℃) Reverse peak current: 50μA

Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 35ns

Thermal Resistance (Typical) RθJ-A Thermal resistance (typical): 30 ℃/W; RθJ-C Thermal resistance (typical): 10 ℃/W

Package: DO-201AD

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
Maximum non-repetitive peak forward current	125 A
Number of components	1
Maximum operating temperature	125 °C
Maximum output current	3 A
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.035 µs
surface mount	NO
Base Number Matches	1

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