HN1L03FU
TOSHIBA Field Effect Transistor Silicon N·P Channel MOS Type
HN1L03FU
High Speed Switching Applications
Analog Switch Applications
Unit in mm
Q1, Q2 common
Low threshold voltage
Q1: V
th
= 0.8~2.5V
High speed
Small package
Q2: V
th
=−0.5~−1.5V
Q1 Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
Symbol
V
DS
V
GSS
I
D
Rating
50
10
50
Unit
V
V
mA
Q2 Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
Symbol
V
DS
V
GSS
I
D
Rating
−20
−7
−50
Unit
V
V
mA
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1C
Marking
Absolute Maximum Ratings (Q1, Q2 Common)
(Ta
=
25°C)
Characteristic
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
P
D*
T
ch
T
stg
Rating
200
150
−55~150
Unit
mW
°C
°C
Equivalent Circuit
(Top View)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
*
Total rating
1
2007-11-01
HN1L03FU
Q1 Electrical Characteristics
(Ta
=
25°C)
Characteristic
Gate leakage current
Drain-Source breakdown
voltage
Drain cut-off current
Gate threshold voltage
Forward transfer
admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer
capacitance
Output capacitance
Turn-on time
Switching time
Turn-off time
t
off
Symbol
I
GSS
Test Condition
V
GS
= 10V, V
DS
= 0
Min
―
50
―
0.8
20
―
―
―
―
―
―
Typ.
―
―
―
―
―
20
6.3
1.3
5.7
0.11
0.15
Max
1
―
1
2.5
―
50
―
―
―
―
―
Unit
μA
V
μA
V
mS
Ω
pF
pF
pF
μs
μs
V
(BR) DSS
I
D
= 100μA, V
GS
= 0
I
DSS
V
th
|Y
fs
|
R
DS (ON)
C
iss
C
rss
C
oss
t
on
V
DS
= 50V, V
GS
= 0
V
DS
= 5V, I
D
= 0.1mA
V
DS
= 5V, I
D
= 10mA
I
D
= 10mA, V
GS
= 4.0V
V
DS
= 5V, V
GS
= 0,
f = 1MHz
V
DS
= 5V, V
GS
= 0,
f = 1MHz
V
DS
= 5V, V
GS
= 0,
f = 1MHz
V
DD
= 5V, I
D
= 10mA,
V
GS
= 0~4.0V
V
DD
= 5V, I
D
= 10mA,
V
GS
= 0~4.0V
Q2 Electrical Characteristics
(Ta
=
25°C)
Characteristic
Gate leakage current
Drain-Source breakdown
voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn-on time
Switching time
Turn-off time
t
off
Symbol
I
GSS
Test Condition
V
GS
=
−7V,
V
DS
= 0
Min
―
−20
―
−0.5
15
―
―
―
―
―
―
Typ.
―
―
―
―
―
20
10.4
2.8
8.4
0.15
0.13
Max
−1
―
−1
−1.5
―
40
―
―
―
―
―
Unit
μA
V
μA
V
mS
Ω
pF
pF
pF
μs
μs
V
(BR) DSS
I
D
=
−100μA,
V
GS
= 0
I
DSS
V
th
|Y
fs
|
R
DS (ON)
C
iss
C
rss
C
oss
t
on
V
DS
=
−20V,
V
GS
= 0
V
DS
=
−3V,
I
D
=
−0.1mA
V
DS
=
−3V,
I
D
=
−10mA
I
D
=
−10mA,
V
GS
=
−2.5V
V
DS
=
−3V,
V
GS
= 0,
f = 1MHz
V
DS
=
−3V,
V
GS
= 0,
f = 1MHz
V
DS
=
−3V,
V
GS
= 0,
f = 1MHz
V
DD
=
−3V,
I
D
=
−10mA,
V
GS
= 0~−2.5V
V
DD
=
−3V,
I
D
=
−10mA,
V
GS
= 0~−2.5V
2
2007-11-01
Analogue and Mixed Signal
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