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TC7SZ02AFE

Description
2 Input NOR Gate
Categorylogic    logic   
File Size149KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TC7SZ02AFE Overview

2 Input NOR Gate

TC7SZ02AFE Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Parts packaging codeSON
package instructionVSOF, FL6,.047,20
Contacts5
Reach Compliance Codeunknow
seriesLVC/LCX/Z
JESD-30 codeR-PDSO-F5
JESD-609 codee0
length1.6 mm
Load capacitance (CL)50 pF
Logic integrated circuit typeNOR GATE
MaximumI(ol)0.024 A
Number of functions1
Number of entries2
Number of terminals5
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeVSOF
Encapsulate equivalent codeFL6,.047,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, VERY THIN PROFILE
power supply3.3 V
Prop。Delay @ Nom-Su5.2 ns
propagation delay (tpd)10 ns
Certification statusNot Qualified
Schmitt triggerNO
Maximum seat height0.6 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal pitch0.5 mm
Terminal locationDUAL
width1.2 mm
TC7SZ02AFE
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7SZ02AFE
2 Input NOR Gate
Features
High output drive: ±24 mA (typ.)
@V
CC
= 3 V
Super high speed operation: t
PD
2.4 ns (typ.)
@V
CC
= 5 V, 50 pF
Operation voltage range: V
CC (opr)
= 1.8~5.5 V
Supply voltage data retention: V
CC
= 1.5~5.5 V
Latch-up performance: ±500 mA
ESD performance: Human body model > ±2000 V
Machine model > ±200 V
Power down protection is provided on all inputs.
Matches the performance of TC74LCX series when operated at 3.3 V V
CC
Input rise and fall time (tr, tf) (recommended operation condition)
@V
CC
= 1.8 V, 2.5 V ± 0.2 V: 0~20 ns/V
@V
CC
= 3.3 V ± 0.3 V: 0~10 ns/V
@V
CC
= 5.5 V ± 0.5 V: 0~5 ns/V
Weight: 0.003 g (typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Lead temperature (10 s)
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
T
L
Rating
−0.5~6
−0.5~6
−0.5~V
CC
+
0.5
±20
±20
±50
±50
150
−65~150
260
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2007-11-01

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