2SJ610
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ610
Switching Regulator, DC/DC Converter and
Motor Drive Applications
•
•
•
•
Low drain-source ON-resistance: R
DS (ON)
= 1.85
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 18 S (typ.)
Low leakage current: I
DSS
=
−100 μA
(V
DS
=
−250
V)
Enhancement mode: V
th
=
−1.5~−3.5
V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−250
−250
±20
−2.0
−4.0
20
180
−2.0
2.0
150
−55~150
A
Unit
V
V
V
Pulse (t
=
1 ms)
(Note 1)
JEDEC
W
mJ
A
mJ
°C
°C
―
SC-64
2-7B1B
Drain power dissipation
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEITA
TOSHIBA
Weight: 0.36 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
6.25
125
Unit
°C/W
°C/W
JEDEC
JEITA
TOSHIBA
―
―
2-7J1B
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= −50
V, T
ch
=
25°C (initial), L
=
75 mH, I
AR
= −2.0
A,
R
G
=
25
Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Weight: 0.36 g (typ.)
1
2006-11-16
2SJ610
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
V
DS
= −10
V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±16
V, V
DS
=
0 V
V
DS
= −250
V, V
GS
=
0 V
I
D
= −10
mA, V
GS
=
0 V
V
DS
= −10
V, I
D
= −1
mA
V
GS
= −10
V, I
D
= −1.0
A
V
DS
= −10
V, I
D
= −1.0
A
Min
⎯
⎯
−250
−1.5
⎯
0.5
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
1.85
1.8
381
52
157
5
Max
±10
−100
⎯
−3.5
2.55
⎯
⎯
⎯
pF
Unit
μA
μA
V
V
Ω
S
⎯
10 V
I
D
=
1.0 A
V
OUT
⎯
⎯
⎯
ns
⎯
⎯
Turn-on time
Switching time
Fall time
t
on
V
GS
0V
20
50
Ω
R
L
=
100
Ω
⎯
V
DD
∼
100 V
−
⎯
⎯
⎯
⎯
36
24
11
13
6
t
f
⎯
⎯
⎯
⎯
⎯
nC
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
off
Q
g
Q
gs
Q
gd
Duty
<
1%, t
w
=
10
μs
=
V
DD
∼
−200
V, V
GS
= −10
V,
−
I
D
= −2.0
A
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristic
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
= −2.0
A, V
GS
=
0 V
I
DR
= −2.0
A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
120
540
Max
−2.0
−4.0
2.0
⎯
⎯
Unit
A
A
V
ns
nC
Marking
J610
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-16
2SJ610
r
th
– t
w
3
Normalized transient thermal impedance
r
th (t)
/R
th (ch-c)
1
0.5
0.3
0.1
0.05
0.03
0.01
0.005
0.003
0.001
10
μ
Duty
=
0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
6.25°C/W
100
μ
1m
10 m
100 m
1
10
100
Pulse width
t
w
(S)
Safe operating area
−100
−50
−30
200
E
AS
– T
ch
Avalanche energy EAS (mJ)
160
−10
−5
−3
ID max (pulsed)
*
1 ms
*
DC
100
μs
*
120
(A)
80
Drain current ID
−1
−0.5
−0.3
40
0
25
50
75
100
125
150
−0.1
−0.0
*
Single nonrepetitive pulse
Tc
=
25°C
−0.0
Curves must be derated linearly
with increase in temperature.
−0.0
1
VDSS max
3
5
10
30 50
100
300 500 1000
Channel temperature (initial) T
ch
(°C)
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
Waveform
Drain-source voltage
V
DS
(V)
Test circuit
R
G
=
25
Ω
V
DD
= −50
V, L
=
75 mH
5
2006-11-16
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