K9F1208U0C
K9F1208R0C K9F1208B0C
FLASH MEMORY
K9F1208X0C
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AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
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2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
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* Samsung Electronics reserves the right to change products or specification without notice.
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K9F1208U0C
K9F1208R0C K9F1208B0C
Document Title
64M x 8 Bits NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0
0.1
0.2
0.3
Initial issue.
2.7V part is added
Address of Read 2 is changed (A
4
~A
7
: Don’t care -> Fixed "Low" )
1. Add tRPS/tRCS/tREAS parameter for status read
2. Add nWP timing guide
1. Change from tRPS/tRCS/tREAS to tRPB/tRCB/tREAB parameter for
1.8V device busy state
1. Sequential Row Read is added
1. tCRY is changed (50ns+tR(R/B) --> 5us)
1. Mode selection is modified ("CE don’t care" case)
Draft Date
Nov. 10th 2005
July 13th 2006
Aug. 1st 2006
Oct. 12th 2006
Remark
Advance
Advance
Advance
Advance
0.4
Nov. 14th 2006
Advance
0.5
1.0
1.1
Nov. 15th 2006
Dec. 28th 2006
June 18th 2007
Preliminary
Final
Final
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
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K9F1208U0C
K9F1208R0C K9F1208B0C
FLASH MEMORY
64M x 8 Bits NAND Flash Memory
PRODUCT LIST
Part Number
K9F1208R0C-J
K9F1208B0C-P
K9F1208U0C-P
K9F1208U0C-J
Vcc Range
1.65V ~ 1.95V
2.5V ~ 2.9V
2.7V ~ 3.6V
x8
Organization
PKG Type
FBGA
TSOP1
TSOP1
FBGA
FEATURES
•
Voltage Supply
- 1.8V Device(K9F1208R0C) : 1.65V ~ 1.95V
- 2.7V Device(K9F1208B0C) : 2.5V ~ 2.9V
- 3.3V Device(K9F1208U0C) : 2.7V ~ 3.6V
•
Organization
- Memory Cell Array : (64M + 2M) x 8bits
- Data Register : (512 + 16) x 8bits
•
Automatic Program and Erase
- Page Program : (512 + 16) x 8bits
- Block Erase : (16K + 512)Bytes
•
Page Read Operation
- Page Size : (512 + 16)Bytes
- Random Access
: 15µs(Max.)
- Serial Page Access : 42ns(Min.)
•
Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
(with
1bit/512Byte ECC)
- Data Retention : 10 Years
•
Command Register Operation
•
Unique ID for Copyright Protection
•
Package
- K9F1208U0C-PCB0/PIB0 : Pb-Free Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208X0C-JCB0/JIB0: Pb-Free Package
63-Ball FBGA(8.5 x 13 x 1.2mmt)
- K9F1208B0C-PCB0/PIB0 : Pb-Free Package
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
GENERAL DESCRIPTION
Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in
typical 200µs on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can
be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.
The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verifica-
tion and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0C′s extended reliability of 100K
program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F1208X0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
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