Transys
Electronics
L I M I T E D
SOT-323 Plastic-Encapsulated Transistors
SOT-323
MMST5401
FEATURES
Power dissipation
P
CM:
TRANSISTOR (PNP)
1.
BASE
2.
EMITTER
3.
COLLECTOR
1. 25¡ À0. 05
1. 01 R
EF
0.2
W (Tamb=25℃)
2. 30¡ À0. 05
Collector current
-0.2
A
I
CM:
Collector-base voltage
-160
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
V
CE(sat)
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
Base-emitter voltage
V
BE(sat)
Transition frequency
Collector output capacitance
1. 30¡ À0. 03
Unit: mm
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-100
µA, I
E
=0
Ic=
-1
mA, I
B
=0
I
E
=
-10
µA, I
C
=0
V
CB
=
-120
V, I
E
=0
V
EB
=
-3
V, I
C
=0
V
CE
=-
5
V, I
C
=
-1
mA
V
CE
=
-5
V, I
C
=
-10
mA
V
CE
=
-5
V, I
C
=
-50
mA
I
C
=
-10
mA, I
B
=
-1
mA
I
C
=-
50
mA, I
B
=-
5
mA
I
C
=
-10
mA, I
B
=
-1
mA
I
C
=-
50
mA, I
B
=-
5
mA
V
CE
=
-10
V, I
C
=
-10
mA, f=100MHz
V
CB
=
-10
V, I
E
=0, f=
1
MHz
V
CE
=
-5
V, I
c
=
-0.2
mA,
f=
1K
HZ, Rg=1
0
Ω
-160
-150
-5
-50
-50
50
60
50
-0.2
-0.5
-1
-1
100
300
6
0. 30
2. 00¡ À0. 05
nA
nA
240
V
V
V
V
MHz
pF
f
T
C
ob
NF
Noise figure
8
dB
Marking
K4M
Analogue and Mixed Signal
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