NTE341 datasheet, PDF - EEWORLD Datasheet

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NTE341: DescriptionSilicon NPN Transistor RF Power Output; CategoryDiscrete semiconductor The transistor; File Size72KB，2 Pages; ManufacturerNTE; Websitehttp://www.nteinc.com; Environmental Compliance

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NTE341 Overview

Silicon NPN Transistor RF Power Output

NTE341 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NTE
Parts packaging code	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	EMITTER
Maximum collector current (IC)	0.64 A
Collector-emitter maximum voltage	18 V
Configuration	SINGLE
Minimum DC current gain (hFE)	5
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	8 W
Maximum power dissipation(Abs)	8 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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NTE341

Silicon NPN Transistor

RF Power Output

Description:

The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications.

The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead

for high gain performance.

Features:

175MHz

12.5 Volts

OUT

= 4W Minimum

= 12dB

Grounded Emitter

Absolute Maximum Ratings:

= +25°C unless otherwise specified)

Collector−Base Voltage, V

CBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V

Collector−Emitter Voltage, V

CEO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V

Collector−Emitter Voltage, V

CES

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V

Emitter−Base Voltage, V

EBO

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V

Collector Current, I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640mA

Total Device Dissipation, P

tot

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W

Operating Junction Temperature, T

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C

Storage Temperatures Range, T

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−65°

to +200°C

Thermal Resistance, Junction−to−Case, R

thJC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21.9°C/W

Electrical Characteristics:

= +25°C unless otherwise specified)

Parameter

OFF Characteristics

Collector−Emitter Breakdown Voltage

Emitter−Base Breakdown Voltage

Collector Cutoff Current

ON Characteristics

DC Current Gain

Dynamic Characteristics

Output Power

Common−Emitter Amplifier Power Gain

Output Capacitance

OUT

= 12.5V, f = 175MHz

= 15V, f = 1MHz

−

180

−

230

= 5V, I

= 50mA

−

100

(BR)CEO

= 10mA, I

= 0

(BR)CES

= 5mA, V

= 0

(BR)EBO

= 0, I

= 1mA

CBO

= 15V, I

= 0

−

250

µA

Symbol

Test Conditions

Min

Typ

Max Unit

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