Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35
Parameter Name | Attribute value |
package instruction | O-LALF-W2 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1 V |
JEDEC-95 code | DO-35 |
JESD-30 code | O-LALF-W2 |
Maximum non-repetitive peak forward current | 2 A |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 200 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 0.15 A |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Maximum power dissipation | 0.5 W |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 100 V |
Maximum reverse current | 5 µA |
Maximum reverse recovery time | 0.004 µs |
surface mount | NO |
Terminal form | WIRE |
Terminal location | AXIAL |
Base Number Matches | 1 |