IRF9540NLPBF datasheet, PDF - EEWORLD Datasheet

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IRF9540NLPBF: Description23 A, 100 V, 0.117 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA; CategoryDiscrete semiconductor The transistor; File Size325KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRF9540NLPBF Overview

23 A, 100 V, 0.117 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA

IRF9540NLPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-262AA
package instruction	LEAD FREE, TO-262, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	84 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	23 A
Maximum drain current (ID)	23 A
Maximum drain-source on-resistance	0.117 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	110 W
Maximum pulsed drain current (IDM)	92 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

IRF9540NLPBF Related Products

	IRF9540NLPBF	IRF9540NSPBF
Description	23 A, 100 V, 0.117 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA	23 A, 100 V, 0.117 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-262AA	D2PAK
package instruction	LEAD FREE, TO-262, 3 PIN	LEAD FREE, D2PAK-3
Contacts	3	3
Reach Compliance Code	_compli	not_compliant
ECCN code	EAR99	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	84 mJ	84 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (Abs) (ID)	23 A	23 A
Maximum drain current (ID)	23 A	23 A
Maximum drain-source on-resistance	0.117 Ω	0.117 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-262AA	TO-263AB
JESD-30 code	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	110 W	110 W
Maximum pulsed drain current (IDM)	92 A	92 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrie	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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