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HYB18L256169BFX-7.5

Description
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
Categorystorage    storage   
File Size1MB,47 Pages
ManufacturerQIMONDA
Environmental Compliance
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HYB18L256169BFX-7.5 Overview

DRAMs for Mobile Applications 256-Mbit Mobile-RAM

HYB18L256169BFX-7.5 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerQIMONDA
Parts packaging codeBGA
package instructionVFBGA, BGA54,9X9,32
Contacts54
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PBGA-B54
length11 mm
memory density268435456 bi
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals54
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA54,9X9,32
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.00001 A
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width8 mm

HYB18L256169BFX-7.5 Related Products

HYB18L256169BFX-7.5 HYB18L256169BFX HYE18L256169BFX-7.5
Description DRAMs for Mobile Applications 256-Mbit Mobile-RAM DRAMs for Mobile Applications 256-Mbit Mobile-RAM DRAMs for Mobile Applications 256-Mbit Mobile-RAM
Is it Rohs certified? conform to - conform to
Maker QIMONDA - QIMONDA
Parts packaging code BGA - BGA
package instruction VFBGA, BGA54,9X9,32 - VFBGA, BGA54,9X9,32
Contacts 54 - 54
Reach Compliance Code unknow - unknow
ECCN code EAR99 - EAR99
access mode FOUR BANK PAGE BURST - FOUR BANK PAGE BURST
Maximum access time 5.4 ns - 5.4 ns
Other features AUTO/SELF REFRESH - AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz - 133 MHz
I/O type COMMON - COMMON
interleaved burst length 1,2,4,8 - 1,2,4,8
JESD-30 code R-PBGA-B54 - R-PBGA-B54
length 11 mm - 11 mm
memory density 268435456 bi - 268435456 bi
Memory IC Type SYNCHRONOUS DRAM - SYNCHRONOUS DRAM
memory width 16 - 16
Humidity sensitivity level 3 - 3
Number of functions 1 - 1
Number of ports 1 - 1
Number of terminals 54 - 54
word count 16777216 words - 16777216 words
character code 16000000 - 16000000
Operating mode SYNCHRONOUS - SYNCHRONOUS
Maximum operating temperature 70 °C - 85 °C
organize 16MX16 - 16MX16
Output characteristics 3-STATE - 3-STATE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
encapsulated code VFBGA - VFBGA
Encapsulate equivalent code BGA54,9X9,32 - BGA54,9X9,32
Package shape RECTANGULAR - RECTANGULAR
Package form GRID ARRAY, VERY THIN PROFILE, FINE PITCH - GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 260 - 260
power supply 1.8 V - 1.8 V
Certification status Not Qualified - Not Qualified
refresh cycle 8192 - 8192
Maximum seat height 1 mm - 1 mm
self refresh YES - YES
Continuous burst length 1,2,4,8,FP - 1,2,4,8,FP
Maximum standby current 0.00001 A - 0.00001 A
Maximum slew rate 0.1 mA - 0.1 mA
Maximum supply voltage (Vsup) 1.95 V - 1.95 V
Minimum supply voltage (Vsup) 1.7 V - 1.7 V
Nominal supply voltage (Vsup) 1.8 V - 1.8 V
surface mount YES - YES
technology CMOS - CMOS
Temperature level COMMERCIAL - COMMERCIAL EXTENDED
Terminal form BALL - BALL
Terminal pitch 0.8 mm - 0.8 mm
Terminal location BOTTOM - BOTTOM
Maximum time at peak reflow temperature 40 - 40
width 8 mm - 8 mm
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