|
HYB18L256169BFX-7.5 |
HYB18L256169BFX |
HYE18L256169BFX-7.5 |
Description |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
Is it Rohs certified? |
conform to |
- |
conform to |
Maker |
QIMONDA |
- |
QIMONDA |
Parts packaging code |
BGA |
- |
BGA |
package instruction |
VFBGA, BGA54,9X9,32 |
- |
VFBGA, BGA54,9X9,32 |
Contacts |
54 |
- |
54 |
Reach Compliance Code |
unknow |
- |
unknow |
ECCN code |
EAR99 |
- |
EAR99 |
access mode |
FOUR BANK PAGE BURST |
- |
FOUR BANK PAGE BURST |
Maximum access time |
5.4 ns |
- |
5.4 ns |
Other features |
AUTO/SELF REFRESH |
- |
AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) |
133 MHz |
- |
133 MHz |
I/O type |
COMMON |
- |
COMMON |
interleaved burst length |
1,2,4,8 |
- |
1,2,4,8 |
JESD-30 code |
R-PBGA-B54 |
- |
R-PBGA-B54 |
length |
11 mm |
- |
11 mm |
memory density |
268435456 bi |
- |
268435456 bi |
Memory IC Type |
SYNCHRONOUS DRAM |
- |
SYNCHRONOUS DRAM |
memory width |
16 |
- |
16 |
Humidity sensitivity level |
3 |
- |
3 |
Number of functions |
1 |
- |
1 |
Number of ports |
1 |
- |
1 |
Number of terminals |
54 |
- |
54 |
word count |
16777216 words |
- |
16777216 words |
character code |
16000000 |
- |
16000000 |
Operating mode |
SYNCHRONOUS |
- |
SYNCHRONOUS |
Maximum operating temperature |
70 °C |
- |
85 °C |
organize |
16MX16 |
- |
16MX16 |
Output characteristics |
3-STATE |
- |
3-STATE |
Package body material |
PLASTIC/EPOXY |
- |
PLASTIC/EPOXY |
encapsulated code |
VFBGA |
- |
VFBGA |
Encapsulate equivalent code |
BGA54,9X9,32 |
- |
BGA54,9X9,32 |
Package shape |
RECTANGULAR |
- |
RECTANGULAR |
Package form |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
- |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) |
260 |
- |
260 |
power supply |
1.8 V |
- |
1.8 V |
Certification status |
Not Qualified |
- |
Not Qualified |
refresh cycle |
8192 |
- |
8192 |
Maximum seat height |
1 mm |
- |
1 mm |
self refresh |
YES |
- |
YES |
Continuous burst length |
1,2,4,8,FP |
- |
1,2,4,8,FP |
Maximum standby current |
0.00001 A |
- |
0.00001 A |
Maximum slew rate |
0.1 mA |
- |
0.1 mA |
Maximum supply voltage (Vsup) |
1.95 V |
- |
1.95 V |
Minimum supply voltage (Vsup) |
1.7 V |
- |
1.7 V |
Nominal supply voltage (Vsup) |
1.8 V |
- |
1.8 V |
surface mount |
YES |
- |
YES |
technology |
CMOS |
- |
CMOS |
Temperature level |
COMMERCIAL |
- |
COMMERCIAL EXTENDED |
Terminal form |
BALL |
- |
BALL |
Terminal pitch |
0.8 mm |
- |
0.8 mm |
Terminal location |
BOTTOM |
- |
BOTTOM |
Maximum time at peak reflow temperature |
40 |
- |
40 |
width |
8 mm |
- |
8 mm |