TN2540N8-G datasheet, PDF - EEWORLD Datasheet

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TN2540N8-G: Description0.57 A, 400 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA; Categorysemiconductor Discrete semiconductor; File Size806KB，7 Pages; ManufacturerSUTEX; Websitehttp://www.supertex.com/

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TN2540N8-G Overview

0.57 A, 400 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA

TN2540N8-G Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	400 V
Processing package description	SAME AS SOT-89, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	FLAT
terminal coating	MATTE TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE WITH BUILT-IN DIODE
Shell connection	DRAIN
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	1.6 W
Channel type	N-CHANNEL
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER
Maximum leakage current	0.5700 A
Maximum drain on-resistance	12 ohm
Maximum leakage current pulse	1.8 A

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TN2540

Low Threshold N-Channel

Enhancement-Mode Vertical DMOS FET

Features

►

Low threshold — 2.0V max

High input impedance

Low input capacitance — 125pF max

Fast switching speeds

General Description

The Supertex TN2540 is a low threshold enhancement-

mode transistor that utilizes an advanced vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device

with the power handling capabilities of bipolar transistors,

and the high input impedance and positive temperature

coefﬁcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway

and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

►

Low ON-resistance

►

Free from secondary breakdown

►

Low input and output leakage

►

Complementary N and P-channel devices

Applications

►

Logic level interfaces — ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic devices

Analog switches

General purpose line drivers

Telecom switches

Switching Waveforms and Test Circuit

10V

90%

INPUT

10%

(ON)

PULSE

GENERATOR

(OFF)

d(OFF)

OUTPUT

GEN

d(ON)

10%

INPUT

D.U.T.

OUTPUT

90%

TN2540N8-G Related Products

	TN2540N8-G	TN2540N3-G	TN2540ND	TN2540_07
Description	0.57 A, 400 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA	175 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	175 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	175 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
Number of terminals	3	3	3	3
Minimum breakdown voltage	400 V	400 V	400 V	400 V
Processing package description	SAME AS SOT-89, 3 PIN	GREEN PACKAGE-3	GREEN PACKAGE-3	GREEN PACKAGE-3
Lead-free	Yes	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	round	round	round
Package Size	SMALL OUTLINE	cylindrical	cylindrical	cylindrical
Terminal form	FLAT	THROUGH-hole	THROUGH-hole	THROUGH-hole
terminal coating	MATTE TIN	MATTE Tin	MATTE Tin	MATTE Tin
Terminal location	SINGLE	BOTTOM	BOTTOM	BOTTOM
Packaging Materials	PLASTIC/EPOXY	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	SINGLE WITH BUILT-IN DIODE	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode
Number of components	1	1	1	1
transistor applications	SWITCHING	switch	switch	switch
Transistor component materials	SILICON	silicon	silicon	silicon
Maximum ambient power consumption	1.6 W	0.7400 W	0.7400 W	0.7400 W
Channel type	N-CHANNEL	N channel	N channel	N channel
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	GENERAL PURPOSE POWER	Universal small signal	Universal small signal	Universal small signal
Maximum leakage current	0.5700 A	0.1750 A	0.1750 A	0.1750 A
Maximum drain on-resistance	12 ohm	12 ohm	12 ohm	12 ohm
feedback capacitor	-	25 pF	25 pF	25 pF

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