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5082-3002

Description
Pin Diode, 200V V(BR), Silicon,
Categorydiode    The PIN diode   
File Size26KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

5082-3002 Overview

Pin Diode, 200V V(BR), Silicon,

5082-3002 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionO-XALF-W2
Reach Compliance Codeunknown
applicationATTENUATOR; SWITCHING
Minimum breakdown voltage200 V
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance0.25 pF
Diode component materialsSILICON
Maximum diode forward resistance1 Ω
Diode typePIN DIODE
frequency bandS BAND
JESD-30 codeO-XALF-W2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.25 W
Certification statusNot Qualified
surface mountNO
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
5082-3002
SILICON PIN DIODE
PACKAGE STYLE 01
DESCRIPTION:
The
ASI 5082-3002
is a Silicon PIN
Diode Designed for General Purpose
Attenuator and Switching Applications
from 100 MHz to 3 GHz.
MAXIMUM RATINGS
I
F
V
R
P
DISS
T
J
T
STG
θ
JC
100 mA
300 V
250 mW @ T
A
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
0.7 °C/mW
NONE
CHARACTERISTICS
SYMBOL
V
BR
C
T
R
S
τ
t
rr
I
R
= 10
µA
V
R
= 50 V
T
C
= 25 °C
TEST CONDITIONS
f = 1.0 MHz
f = 100 MHz
I
R
= 250 mA
f = 20 mA
MINIMUM
200
TYPICAL
MAXIMUM
0.25
1.0
UNITS
V
pF
nS
nS
I
F
= 100 mA
I
F
= 50 mA
V
R
= 10 V
100
100
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

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