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CMCL1303

Description
4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size59KB,1 Pages
ManufacturerCentral Semiconductor
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CMCL1303 Overview

4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35

CMCL1303 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeCURRENT REGULATOR DIODE
Minimum dynamic impedance300000 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee0
Maximum limit voltage2 V
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.6 W
Certification statusNot Qualified
Nominal regulation current (Ireg)3 mA
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologyFIELD EFFECT
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

CMCL1303 Related Products

CMCL1303 CMCL1300 CMCL1301 CMCL1302 CMCL1304
Description 4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35 4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35 4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35 4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35 4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code _compli _compli _compli _compli _compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type CURRENT REGULATOR DIODE CURRENT REGULATOR DIODE CURRENT REGULATOR DIODE CURRENT REGULATOR DIODE CURRENT REGULATOR DIODE
Minimum dynamic impedance 300000 Ω 4000000 Ω 800000 Ω 400000 Ω 250000 Ω
JEDEC-95 code DO-35 DO-35 DO-35 DO-35 DO-35
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0 e0 e0 e0
Maximum limit voltage 2 V 1 V 1.5 V 2 V 2.5 V
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C
Package body material GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.6 W 0.6 W 0.6 W 0.6 W 0.6 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Nominal regulation current (Ireg) 3 mA 0.5 mA 1 mA 2 mA 4 mA
Maximum repetitive peak reverse voltage 100 V 100 V 100 V 100 V 100 V
surface mount NO NO NO NO NO
technology FIELD EFFECT FIELD EFFECT FIELD EFFECT FIELD EFFECT FIELD EFFECT
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker Central Semiconductor - Central Semiconductor Central Semiconductor Central Semiconductor
Base Number Matches 1 1 1 - 1
package instruction - O-LALF-W2 O-LALF-W2 - O-LALF-W2

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