CMCL1304 datasheet, PDF - EEWORLD Datasheet

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CMCL1304: Description4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35; CategoryDiscrete semiconductor diode; File Size59KB，1 Pages; ManufacturerCentral Semiconductor

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CMCL1304 Overview

4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35

CMCL1304 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	O-LALF-W2
Reach Compliance Code	_compli
ECCN code	EAR99
Is Samacsys	N
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	CURRENT REGULATOR DIODE
Minimum dynamic impedance	250000 Ω
JEDEC-95 code	DO-35
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Maximum limit voltage	2.5 V
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.6 W
Certification status	Not Qualified
Nominal regulation current (Ireg)	4 mA
Maximum repetitive peak reverse voltage	100 V
surface mount	NO
technology	FIELD EFFECT
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

CMCL1304 Related Products

	CMCL1304	CMCL1300	CMCL1301	CMCL1302	CMCL1303
Description	4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35	4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35	4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35	4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35	4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	_compli	_compli	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	CURRENT REGULATOR DIODE	CURRENT REGULATOR DIODE	CURRENT REGULATOR DIODE	CURRENT REGULATOR DIODE	CURRENT REGULATOR DIODE
Minimum dynamic impedance	250000 Ω	4000000 Ω	800000 Ω	400000 Ω	300000 Ω
JEDEC-95 code	DO-35	DO-35	DO-35	DO-35	DO-35
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
JESD-609 code	e0	e0	e0	e0	e0
Maximum limit voltage	2.5 V	1 V	1.5 V	2 V	2 V
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum power dissipation	0.6 W	0.6 W	0.6 W	0.6 W	0.6 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Nominal regulation current (Ireg)	4 mA	0.5 mA	1 mA	2 mA	3 mA
Maximum repetitive peak reverse voltage	100 V	100 V	100 V	100 V	100 V
surface mount	NO	NO	NO	NO	NO
technology	FIELD EFFECT	FIELD EFFECT	FIELD EFFECT	FIELD EFFECT	FIELD EFFECT
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	Central Semiconductor	-	Central Semiconductor	Central Semiconductor	Central Semiconductor
package instruction	O-LALF-W2	O-LALF-W2	O-LALF-W2	-	-
Base Number Matches	1	1	1	-	1

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