HMC311SC70
/
311SC70E
v01.0807
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Typical Applications
The HMC311SC70(E) is ideal for:
• Cellular / PCS / 3G
• WiBro / WiMAX / 4G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio & Test Equipment
Features
P1dB Output Power: +15 dBm
Output IP3: +30 dBm
Gain: 15 dB
Cascadable, 50 Ohm I/O’s
Single Supply: +5V
Industry Standard SC70 Package
Functional Diagram
General Description
The HMC311SC70(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
DC to 8 GHz amplifier. Packaged in an industry
standard SC70, the amplifier can be used as either
a cascadable 50 Ohm gain stage or to drive the LO
port of HMC mixers with up to +15 dBm output power.
The HMC311SC70(E) offers 15 dB of gain and an
output IP3 of +30 dBm while requiring only 54 mA
from a +5V supply. The Darlington topology results in
reduced sensitivity to normal process variations, and
yields excellent gain stability over temperature while
requiring a minimal number of external bias
components.
Electrical Specifications,
Vs= 5V, Rbias= 22 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
DC - 8.0 GHz
DC - 8.0GHz
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
6.0 - 8.0 GHz
DC - 2.0 GHz
2.0 - 6.0 GHz
6.0 - 8.0 GHz
DC - 8.0 GHz
13.5
12.0
10.0
8.0
Min.
14.0
13.0
12.5
11.0
Typ.
15.0
15.0
14.5
13.0
0.004
0.007
0.012
0.018
15
18
15.5
15.0
13.0
11.0
30
27
24
5
54
74
0.007
0.012
0.016
0.022
Max.
Units
dB
dB
dB
dB
dB/ °C
dB/ °C
dB/ °C
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
Gain
Gain Variation Over Temperature
Return Loss Input / Output
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
5 - 16
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC311SC70
/
311SC70E
v01.0807
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
Broadband Gain & Return Loss
20
15
10
RESPONSE (dB)
5
0
-5
-10
-15
-20
-25
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
0
1
2
3
4
5
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
GAIN (dB)
+25C
-40C
+85C
6
7
8
9
10
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
+25C
+85C
-40C
-10
-15
-20
-25
+25C
+85C
-40C
-10
-15
-20
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
-30
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
Noise Figure vs. Temperature
10
9
-5
NOISE FIGURE (dB)
+25C
+85C
-40C
8
7
6
5
4
3
2
1
+25C
+85C
-40C
-10
-15
-20
-25
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 17
HMC311SC70
/
311SC70E
v01.0807
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
P1dB vs. Temperature
18
16
14
P1dB (dBm)
12
10
8
6
4
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
+25C
+85C
-40C
Psat vs. Temperature
18
16
14
Psat (dBm)
12
10
8
6
4
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
+25C
+85C
-40C
Power Compression @ 1 GHz
18
Pout (dBm), GAIN (dB), PAE (%)
16
14
12
10
8
6
4
2
0
-2
-4
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
Pout
Gain
PAE
Power Compression @ 6 GHz
18
Pout (dBm), GAIN (dB), PAE (%)
16
14
12
10
8
6
4
2
0
-2
4
6
-4
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
Pout
Gain
PAE
2
4
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
34
32
30
28
26
IP3 (dBm)
24
22
20
18
16
14
12
10
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
+25C
+85C
-40C
Gain, Power, IP3 & Supply Current vs.
Supply Voltage @ 1 GHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
40
35
30
25
Icq (mA)
20
15
10
5
0
4.5
4.75
5
Vs (V)
5.25
Icq
Gain
P1dB
Psat
OIP3
80
60
40
20
0
5.5
5 - 18
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC311SC70
/
311SC70E
v01.0807
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFin)(Vcc = +3.9 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 5.21 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
+7 Volts
+10 dBm
150 °C
0.34 W
191 °C/W
-65 to +150 °C
-40 to +85 °C
5
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3. LEAD PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
HMC311SC70
HMC311SC70E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
311
311
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 19
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
HMC311SC70
/
311SC70E
v01.0807
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 8 GHz
5
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 4, 5
GND
These pins must be connected to RF/DC ground.
3
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
6
RFOUT
RF output and DC Bias for the output stage.
Application Circuit
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.9
Rbias
Recommended Component Values
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 μF
900
56 nH
100 pF
1900
22 nH
100 pF
2200
22 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
5200
3.3 nH
100 pF
5800
3.3 nH
100 pF
5 - 20
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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