BH616UV1610_06 datasheet, PDF - EEWORLD Datasheet

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BH616UV1610_06: DescriptionUltra Low Power/High Speed CMOS SRAM 1M X 16 bit; File Size152KB，10 Pages; ManufacturerBSI; Websitehttp://www.brilliancesemi.com/

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BH616UV1610_06 Overview

Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit

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Ultra Low Power/High Speed CMOS SRAM

1M X 16 bit

Pb-Free and Green package materials are compliant to RoHS

BH616UV1610

FEATURES

Wide V

low operation voltage : 1.65V ~ 3.6V

Ultra low power consumption :

= 3.6V

Operation current : 12mA (Max.)at 55ns

2mA (Max.) at 1MHz

Standby current : 5.0uA (Typ.) at 3.0V/25

= 1.2V

Data retention current : 2.5uA(Typ.) at 25

High speed access time :

-55

55ns (Max.) at V

=1.65~3.6V

-70

70ns (Max.) at V

=1.65~3.6V

Automatic power down when chip is deselected

Easy expansion with CE1, CE2 and OE options

I/O Configuration x8/x16 selectable by LB and UB pin.

Three state outputs and TTL compatible

Fully static operation, no clock, no refresh

Data retention supply voltage as low as 1.0V

DESCRIPTION

The BH616UV1610 is a high performance, ultra low power CMOS

Static Random Access Memory organized as 1,048,576 by 16 bits

and operates in a wide range of 1.65V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with typical operating current of

1.5mA at 1MHz at 3.0V/25

C and maximum access time of 55ns at

1.65V/85

Easy memory expansion is provided by an active LOW chip enable

(CE1), an active HIGH chip enable (CE2) and active LOW output

enable (OE) and three-state output drivers.

The BH616UV1610 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BH616UV1610 is made with two chips of 8Mbit SRAM by

stacked multi-chip-package.

The BH616UV1610 is available in 48-ball BGA package.

POWER CONSUMPTION

POWER DISSIPATION

PRODUCT

FAMILY

OPERATING

TEMPERATURE

STANDBY

CCSB1

, Max)

Operating

, Max)

PKG TYPE

=1.8V

10MHz

Max.

=3.6V

=1.8V

1MHz

=3.6V

10MHz

Max.

1MHz

BH616UV1610AI

Industrial

-40

C to +85

30uA

25uA

2mA

6mA

12mA

1.5mA

5mA

8mA

BGA-48-0608

PIN CONFIGURATIONS

CE2

BLOCK DIAGRAM

A12

A11

A10

Address

Input

Buffer

Row

Decoder

1024

Memory Array

DQ8

CE1

DQ0

1024 x 16384

DQ9

DQ10

DQ1

DQ2

16384

VSS

DQ11

A17

DQ3

VCC

DQ12

VSS

A16

DQ4

VSS

DQ14

DQ13

A14

A15

DQ5

DQ6

DQ0

DQ15

Data

Input

Buffer

Data

Output

Buffer

Column I/O

Write Driver

Sense Amp

1024

Column Decoder

DQ15

A19

A12

A13

DQ7

A18

A10

A11

CE2, CE1

Control

Address Input Buffer

A19 A18 A17 A15 A14 A13 A16 A2 A1 A0

48-ball BGA top view

Brilliance Semiconductor, Inc.

reserves the right to change products and specifications without notice.

Detailed product characteristic test report is available upon request and being accepted.

R0201-BH616UV1610

Revision 1.2

May.

2006

BH616UV1610_06 Related Products

	BH616UV1610_06	BH616UV1610	BH616UV1610AI55	BH616UV1610AIG55	BH616UV1610AIP70	BH616UV1610AIP55	BH616UV1610AIG70	BH616UV1610AI70
Description	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit

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