1N4449T-77 datasheet, PDF - EEWORLD Datasheet

1N4449T-77: DescriptionRectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35; CategoryDiscrete semiconductor diode; File Size76KB，1 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/

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1N4449T-77 Overview

Rectifier Diode, 1 Element, 0.15A, 100V V(RRM), Silicon, DO-35

Parameter Name	Attribute value
package instruction	O-LALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JEDEC-95 code	DO-35
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	2 A
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Maximum output current	0.15 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.004 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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