BF857 datasheet, PDF - EEWORLD Datasheet

BF857: DescriptionNPN high-voltage transistors; CategoryDiscrete semiconductor The transistor; File Size46KB，8 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BF857 Overview

NPN high-voltage transistors

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	0.3 A
Configuration	Single
Minimum DC current gain (hFE)	25
JESD-609 code	e0
Maximum operating temperature	140 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.8 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	60 MHz

	BF857	BF859	BF858
Description	NPN high-voltage transistors	NPN high-voltage transistors	NPN high-voltage transistors
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknow	unknow	unknow
Maximum collector current (IC)	0.3 A	0.3 A	0.3 A
Configuration	Single	Single	Single
Minimum DC current gain (hFE)	25	25	25
JESD-609 code	e0	e0	e0
Maximum operating temperature	140 °C	140 °C	140 °C
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	1.8 W	1.8 W	1.8 W
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	60 MHz	60 MHz	60 MHz

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