Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Nexperia |
package instruction | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 1 A |
Collector-emitter maximum voltage | 80 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 100 |
JESD-30 code | R-PDSO-G4 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 4 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -55 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | NPN |
Guideline | AEC-Q101; IEC-60134 |
surface mount | YES |
Terminal surface | Tin (Sn) |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 180 MHz |
Base Number Matches | 1 |
BCP56-16 | |
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Description | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon |
Is it Rohs certified? | conform to |
Maker | Nexperia |
package instruction | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 1 A |
Collector-emitter maximum voltage | 80 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 100 |
JESD-30 code | R-PDSO-G4 |
JESD-609 code | e3 |
Humidity sensitivity level | 1 |
Number of components | 1 |
Number of terminals | 4 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -55 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | NPN |
Guideline | AEC-Q101; IEC-60134 |
surface mount | YES |
Terminal surface | Tin (Sn) |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 180 MHz |
Base Number Matches | 1 |